Abstract:Polarized Raman spectroscopy is applied to non-destructively unfold the variation of crystallographic orientation in wurtzitic GaN films that occurred during their growth on (0001)-oriented sapphire substrates as a function of growth conditions. Variations of polarized Raman spectra were clearly observed at different locations along the growth direction by systematically performing line scans on cross sections of different film/substrate systems. Such variations showed a strong dependence on the type of buffer layer, deposition temperature, and reactor pressure. The observed trends suggested the occurrence of inhomogeneous lateral growth of GaN films near the buffer layer and a continuous adjustment of the structure of the tilted-grown epilayer during the growth process until reaching the expected stable structure. The large elastic/thermal mismatch, which could not be fully relaxed by the effect of the buffer layer, resulted in a non-uniform distribution of residual strain. Such strain, mainly stored at the interface, gradually relaxed by the occurrence of tilting and twisting of the crystal cells along the film growth direction: a process that spontaneously occurred minimizing the strain energy stored in the film/substrate system. Varying reactor pressure caused a variation of residual strain in the epilayer and thus a different adjustment of the GaN microstructure during the growth process. Relatively homogenous GaN films with a low density of dislocations could be achieved on patterned sapphire substrates, despite the presence of crystallographic tilting of the film.

Stress and Morphology of a Nonpolara-Plane GaN Layer Onr-Plane Sapphire Substrate

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

Stress state of GaN epilayer grown on sapphire and 6H-SiC substrates

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Structural and Micromechanical Analyses by Polarized Raman Spectroscopy of Wurtzitic GaN Films Grown on (0001) Sapphire Substrates

Effects of Carrier Gas on the Stress of A-Plane GaN Films Grown on R-Plane Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Study on a-plane GaN etching residual stress using Raman scattering

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Strain Effect on Optical Polarization Properties of a ‐plane GaN on R ‐plane Sapphire

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Study of Stress in Ammonothermal Non-Polar and Semi-Polar GaN Crystal Grown on HVPE GaN Seeds

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Effect of defects on strain state in nonpolar a-plane GaN

Study of(1120)non polar α-plane GaN on the (1102)γ-plane sapphire

Epitaxy of M-Plane GaN on Nanoscale Patterned C-Plane Sapphire Substrates

Stress Reduction in GaN Films on (111) Silicon-on-insulator Substrate Grown by Metal–organic Chemical Vapor Deposition

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition