Abstract:Enhanced 395nm ultraviolet photoluminescence (PL) has been obtained from the SiO2/Ge SiO2/ SiO2 sandwiched structure. As light source for optical data storage system, this structure will be very useful in optoelectronic integration. Simultaneously, infrared light emission peaked at 780nm was also observed in this novel structure. In this paper, we discussed the origin of the infrared PL in terms of infrared spec- troscopy (FT-IR) and FL excitation (PLE) spectra. The constancy of the 780nm PL band with annealing temperature does suggest that it can not arise from both the quantum confinement on Ge, Si nanocrystals and the oxygen deficient defects of Ge and Si, because PL from these radiative centers all have peak shifts to some extent. The experimental results from FT-IR strongly suggest that the Ge-O-Ge vibration intensity and the 780nm PL intensity have a similar behavior with annealing temperature. So it is reasonable to be- lieve that the infrared PL band is very related to Ge oxides. Further PLE examination results indicate that it has the similar excitation process to the 395nm ultraviolet PL which comes from TⅡ'(T)→S0 optical transitions in GeO color centers, which has been confirmed by many research groups. So we believe that the 780nm PL should also originate from GeO color centers. The schematic diagram of electronic states of GeO molecule is presented to describe the carriers' excitation and recombination process in this kind of centers. The TⅡ'→S0 optical transitions in GeO color center is responsible for the infrared PL. In GeO molecules, all radiative transitions are intramolecular. Thus the PL bands from the GeO color centers are hardly influ- enced by the SiO2 network. That is why 780nm infrared PL has no wavelength change with different annealing temperature. Our work paves the way for the sandwiched structure's device applications.

INTENSE ROOM-TEMPERATURE PHOTOLUMINESCENCE FROM NANOCRYSTALLINE <font>Ge/SiO</font><sub>2</sub> MULTILAYER STRUCTURES

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Origin of Infrared Photoluminescence from SiO_2/Ge: SiO_2/SiO_2 Sandwiched Structure [J]

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si, 1-x-y Ge x C y Thin Films on Si(100) Substrate

Fabrication of Luminescent Ge Nanocrystals Started from Unlayered Hydrogenated Amorphous Sige Films or Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Room-temperature photoluminescence of thermally oxidized Si1-x-yGexCy thin films on Si (100) substrates

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Optical Properties of the Low-Energy Ge-Implanted and Annealed Sio2 Films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Light Emission from Si Nanoclusters Formed at Low Temperatures

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Role of Surface Defect States in Visible Luminescence from Oxidized Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Visible Light Emission from Crystallized Hydrogenated Amorphous Germanium/silicon Nitride Multiquantum-Well Structures

Visible Photoluminescent Ge Nanocrystals Embedded In A-Sinx Films