Abstract:Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiOxNy) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N-x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved.

Role of Surface Defect States in Visible Luminescence from Oxidized Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Fabrication of Luminescent Ge Nanocrystals Started from Unlayered Hydrogenated Amorphous Sige Films or Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Visible Light Emission from Crystallized Hydrogenated Amorphous Germanium/silicon Nitride Multiquantum-Well Structures

Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Correlation Between Light Emissions from Amorphous-Si：H/SiO2 and Nc-Si/sio2 Multilayers

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Optical properties of Ge/Si quantum dot superlattices

A New Luminescent Defect State in Low Temperature Grown Amorphous SiNxOy Thin Films

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Enhanced Luminescence from Si Quantum Dots/sio2 Multilayers by Hydrogen Annealing

On the Origin of Strong Visible Photoluminescence in a Ge / Porous Si Structure

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Correlation Between Light Emissions From Amorphous-Si : H/Sio2 And Nc-Si/Sio2 Multilayers

A Novel Ge Nanostructure Exhibiting Visible Photoluminescence

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

Photoluminescence from Surface-Oxidized Ge Nanoclusters