Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

Fabrication of Luminescent Ge Nanocrystals Started from Unlayered Hydrogenated Amorphous Sige Films or Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Luminescent Ge Nanocrystallites Embedded In A-Sio2 Films

Role of Surface Defect States in Visible Luminescence from Oxidized Hydrogenated Amorphous Si Hydrogenated Amorphous Ge Multilayers

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Visible Light Emission from Crystallized Hydrogenated Amorphous Germanium/silicon Nitride Multiquantum-Well Structures

Visible Photoluminescent Ge Nanocrystals Embedded In A-Sinx Films

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

A Novel Ge Nanostructure Exhibiting Visible Photoluminescence

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Photoluminescence from Surface-Oxidized Ge Nanoclusters

Optical Absorption and Charging Effect in Nano-Crystalline Ge/SiNx Multilayers

Amorphous SiOx Nanowires Catalyzed by Metallic Ge for Optoelectronic Applications

Photoluminescence from Nanometer Ge Particle Embedded Si Oxide Films