Abstract:We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase selective-area epitaxial growth in a 300-mm CMOS pilot line. Defects resulting from the metamorphic growth of III-V devices on Si make these devices susceptible to different leakage mechanisms at higher operating temperatures. For the high-temperature operation of complex photonics-electronics integrations, understanding the leakage mechanisms of the devices has critical significance. This will help to optimize designs promptly and ensure the reliability and longevity of such devices under extreme operating conditions. The photodetector devices exhibit dark currents below 1 pA, at room temperature and –1 V bias voltage, limited by the noise floor of the measurement setup. To resolve the different leakage mechanisms contributing to the dark current, the devices were measured at elevated temperatures and the results were cross-validated with device simulations. The devices exhibited very low dark currents, with a median below 0.1 nA at 195 °C, suggesting very high-quality material growth. Through device models, leakage mechanisms related to Shockley-Read-Hall (SRH) recombination at bulk volume defects are found to be the main factor contributing to the dark current. The surface SRH recombination is found to be limited, yet affecting the forward bias dark current due to the shortening of the diffusion paths of the majority carriers. Also, the device model shows that the actual dark currents at room temperature can be as low as 0.01 pA, more than 1-order lower than the measured levels. This study emphasizes the high quality of the III-V nano-ridge waveguide devices grown on Si, which can potentially expand the capabilities of silicon photonics platforms further.

Engineering Low Dark Current Density for Ge-on-Si Photodiodes

Suppression of Dark Current in Geox-Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Dark Current Mechanisms Investigation of Surface Passivation InAs/GaSb Photodiodes at Low Temperatures

Low Dark Current GaN Schottky UV Photodiodes Using Oxidised IrNi Schottky Contact

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Analysis dark-current in GeSi/Si superlattice PIN photodetector

Leakage Mechanisms of sub-pA InGaAs/GaAs Nano-Ridge Waveguide Photodetectors Monolithically Integrated on a 300-mm Si Wafer

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Low Leakage of In0.83Ga0.17As Photodiode with Al2O3/SiNx Stacks

Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

Normal-incidence SiGe/Si photodetectors with different buffer layers

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window

Design and Fabrication of HgCdTe Linear Avalanche Devices with Low Gain Normalized Dark Current Density

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Photodiode with Low Dark Current Built in Silicon-on-Insulator by Electrostatic Doping

Germanium-on-silicon Avalanche Photodiode for 1550 Nm Weak Light Signal Detection at Room Temperature

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate