Abstract:The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at cryogenic temperature and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes - so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD) has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR) for better safety and performance, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 {\mu}m. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz {\mu}m^2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life.

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

Germanium-on-silicon Avalanche Photodiode for 1550 Nm Weak Light Signal Detection at Room Temperature

Monolithic Germanium Tin on Si Avalanche Photodiodes

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

High-Temperature Single Photon Detection Performance of 4H-Sic Avalanche Photodiodes

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

Room temperature operation of germanium-silicon single-photon avalanche diode

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures

Ge-on-Si Avalanche Photodiodes with Photon Trapping Nanostructures for Sensing and Optical Quantum Applications

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-speed Ge-on-GaAs Photodetector

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging