Abstract:There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic devices. These systems are quintessential to address several technological bottlenecks in detection and ranging, surveillance, ultrafast spectroscopy, and imaging. In fact, current e-SWIR high bandwidth PDs are predominantly made of III-V compound semiconductors and thus are costly and suffer a limited integration on silicon besides a low responsivity at wavelengths exceeding $2.3 \,\mu$m. To circumvent these challenges, Ge$_{1-x}$Sn$_{x}$ semiconductors have been proposed as building blocks for silicon-integrated high-speed e-SWIR devices. Herein, this study demonstrates a vertical all-GeSn PIN PDs consisting of p-Ge$_{0.92}$Sn$_{0.08}$/i-Ge$_{0.91}$Sn$_{0.09}$/n-Ge$_{0.89}$Sn$_{0.11}$ and p-Ge$_{0.91}$Sn$_{0.09}$/i-Ge$_{0.88}$Sn$_{0.12}$/n-Ge$_{0.87}$Sn$_{0.13}$ heterostructures grown on silicon following a step-graded temperature-controlled epitaxy protocol. The performance of these PDs was investigated as a function of the device diameter in the $10-30 \,\mu$m range. The developed PD devices yield a high bandwidth of 12.4 GHz at a bias of 5V for a device diameter of $10 \,\mu$m. Moreover, these devices show a high responsivity of 0.24 A/W, a low noise, and a $2.8 \,\mu$m cutoff wavelength thus covering the whole e-SWIR range.

Planar GeSn photodiode for high-detectivity photodetection at 1550 nm

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Si-based GeSn photodetectors towards mid-infrared imaging applications

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response