Abstract:Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end, leveraging the ubiquitous silicon-based processing has emerged as a powerful strategy that can be accomplished through the use of group IV germanium-tin (GeSn) alloys. Indeed, due to their compatibility with silicon and their tunable bandgap energy covering the entire MWIR range, GeSn semiconductors are frontrunner platforms for compact and scalable MWIR technologies. However, the GeSn large lattice parameter has been a major hurdle limiting the quality of GeSn epitaxy on silicon wafers. Herein, it is shown that sub-20 nm Ge nanowires (NWs) provide effective compliant substrates to grow Ge$_{1-x}$Sn$_{x}$ alloys with a composition uniformity over several micrometers with a very limited build-up of the compressive strain. Ge/Ge$_{1-x}$Sn$_{x}$ core/shell NWs with Sn content spanning the 6 to 18 at.$\%$ range are demonstrated and integrated in photoconductive devices exhibiting a high signal-to-noise ratio at room temperature and a tunable cutoff wavelength covering the 2.0 $\mu$m to 3.9 $\mu$m range. Additionally, the processed NW-based detectors were used in uncooled imagers enabling the acquisition of high-quality images under both broadband and laser illuminations without a lock-in technique.

High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

High Performance Silicon-Based GeSn P–i–n Photodetectors for Short-Wave Infrared Application

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Resonant-Cavity-Enhanced Ge/Ge1-xSnx Metal-Semiconductor-Metal Photodetector for 2 μm-Band Applications

Ultrafast Broadband Photodetector Based on SnS Synthesized by Hydrothermal Method

High-speed GeSn Resonance Cavity Enhanced Photodetectors for a 50 Gbps Si-based 2 Μm Band Communication System

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

High speed GeSn resonance cavity enhanced photodetectors for 50 Gbps Si-based 2 μm band communication system

Advances in GeSn alloys for MIR applications

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

High Speed (<tex>$\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$</tex> above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si Substrate

Low-cost High-performance P-Gase/i-gesn/n-goi Heterojunction Photodiode for Visible to Short-wave Infrared Multispectral Detection

Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 Μm for Low-Cost Infrared Imaging

Dramatic Increase in SWIR Detection for GeSn Strip Detector with Graphene Hybrid Structure

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires