Abstract:A single photon detector for communication wavelength (1550 nm) is demonstrated using van der Waals heterojunction. The detector exhibits an external quantum efficiency of >20% and a dark count rate less than 1 kHz while operating at room temperature. The results are important for quantum communication, sensing, and computing applications. Single‐photon detectors (SPDs) are crucial in applications ranging from space, biological imaging to quantum communication and information processing. The SPDs that operate at room temperature are of particular interest to broader application space as the energy overhead introduced by cryogenic cooling can be avoided. Although silicon‐based single photon avalanche diodes (SPADs) are well‐matured and operate at room temperature, the bandgap limitation restricts their operation at telecommunication wavelength (1550 nm) and beyond. InGaAs‐based SPADs, on the other hand, are sensitive to 1550 nm photons but suffer from relatively lower efficiency, high dark count rate, afterpulsing probability, and pose hazards to the environment from the fabrication process. In this work, the properties of nanomaterials that can be leveraged to address these challenges are demonstrated and a room‐temperature single‐photon detector capable of operating at 1550 nm is realized. This is achieved by coupling a low bandgap (≈ 350 meV) absorber (black phosphorus) to a sensitive van der Waals probe that is capable of detecting discrete electron fluctuation. The device is optimized for operation at 1550 nm and demonstrates an overall quantum efficiency of 21.4% (estimated as 42.8% for polarized light), and a minimum dark count of ≈ 720 Hz at room temperature.

Room temperature operation of germanium-silicon single-photon avalanche diode

Room-temperature waveguide-coupled silicon single-photon avalanche diodes

Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode.

High performance planar germanium-on-silicon single-photon avalanche diode detectors

Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths

Room-temperature photonic quantum computing in integrated silicon photonics with germanium-silicon single-photon avalanche diodes

Germanium-on-silicon Avalanche Photodiode for 1550 Nm Weak Light Signal Detection at Room Temperature

Room Temperature Single Photon Detection at 1550 nm Using van der Waals Heterojunction

Simulation of Silicon Waveguide Single-Photon Avalanche Detectors for Integrated Quantum Photonics

Room temperature continuous frequency tuning InGaAs/InP single-photon detector

A new single-photon avalanche diode in 90nm standard CMOS technology

Room-temperature Long-Wave Infrared Detector with Thin Double Layers of Amorphous Germanium and Amorphous Silicon.

Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

Silicon single-photon avalanche diodes with nano-structured light trapping

Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-efficiency and low-jitter Silicon single-photon avalanche diodes based on nanophotonic absorption enhancement

First InGaAs/InAlAs Single-Photon Avalanche Diodes (spads) Heterogeneously Integrated with Si Photonics on SOI Platform for 1550 Nm Detection.

An 8×1k SPAD detector with TDI in 0.13μm CMOS technology

On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Impact of Silicide Layer on Single Photon Avalanche Diodes in a 130 Nm CMOS Process