Scalable Modeling and Analysis of TSV Using Bumpless Interconnects Technology

Zewei Li,Zhikuang Cai,Lei Pan,Liu Lu,Xu Binbin,Yufeng Guo
DOI: https://doi.org/10.1109/icept52650.2021.9568018
2021-01-01
Abstract:Chiplet becomes a key technology to continue Moore's law, but the interconnection between dies is one of its difficulties. Bumpless interconnects technology reduces the impedance of the TSV interconnects with no bumps and Ultra-thinning of wafers enables maintain total height while supporting more layer counts. Instead of bump, small TSV passes through substrate and underfill whose thickness are comparable. Considering this structural feature, the equivalent-circuit model of bumpless TSV is proposed and the analytical expressions of proposed model are studied. Up to 100 GHz, the maximum error of S11 and S21 between proposed model and the physical model built in HFSS less than 3% and 9%, which demonstrates the accuracy of equivalent-circuit model. For the structural feature of bumpless TSV, the effect of thickness of underfill and silicon substrate that varies with TSV s height are analyzed respectively. The two conditions are studied in the frequency domain analysis and the electrical behavior differing from traditional TSV is found while scalability is verified.
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