Abstract:As semiconductor integration scales expand and chip sizes shrink, Through Silicon Via (TSV) technology advances towards smaller diameters and higher aspect ratios, posing significant challenges in thermo-mechanical reliability, particularly within interposer substrates where mismatched coefficients of thermal expansion exacerbate issues. This study conducts a thermo-mechanical analysis of TSV structures within multi-layered complex interposers, and analyzes the thermal stress behavior and reliability under variable temperature conditions (-55 °C to 85 °C), taking into account the typical electroplating defects within the copper pillars in TSVs. Initially, an overall model is established to determine the critical TSV locations. Sub-model analysis is then employed to investigate the stress and deformation of the most critical TSV, enabling the calculation of the temperature cycle life accordingly. Results indicate that the most critical TSV resides centrally within the model, exhibiting the highest equivalent stress. During the temperature cycling process, the maximum deformation experiences approximately periodic variations, while the maximum equivalent stress undergoes continuous accumulation and gradually diminishes. Its peak occurs at the contact interface corner between the TSV and Redistribution Layer (RDL). The estimated life of the critical point is 3.1708 × 105 cycles. Furthermore, it is observed that electroplating defect b alleviates thermal stress within TSVs during temperature cycling. This study provides insights into TSV thermal behavior and reliability, which are crucial for optimizing the design and manufacturing processes of advanced semiconductor packaging.

An Inter-Scale Simulation Method for TSV 3D IC Based on Linear Superposition Algorithm and TSV Model Sharing Strategy

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

MORE-Stress: Model Order Reduction Based Efficient Numerical Algorithm for Thermal Stress Simulation of TSV Arrays in 2.5D/3D IC

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

The thermal stress analysis in 3D IC integration with TSV interposer

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Modeling and Application of Multi-Port TSV Networks in 3-D IC

System-Level Analysis of 3D ICs with Thermal TSVs

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Simulation and Optimization of 3D Heterogeneous Integration of Inertial Micro-System

Development of TSV simulator: FASTsv.

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Cu-filled Through Silicon Vias (tsvs) Using Combined Monte Carlo and Finite Element Method

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

TSV Fault Modeling and A BIST Solution for TSV Pre-bond Test.

A Full Chip Scale Numerical Simulation Method for Thermal Management of 3D IC

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Mathematical Simulation and Experimental Verification for Through Silicon Via with Additives