Abstract:Reactive ion etching (RIE) is a widely applied technique for high-precision machining of demanding diamond devices. However, the persistent challenge of widely distributed dislocation-related etch pits on processed surfaces remains poorly understood. In this study, the material removal and pit formation during the etching of the dislocation region by hydrogen and oxygen were investigated by reactive force-field (ReaxFF) molecular dynamics simulation combined with experimental verification. The results unveiled the pivotal role of crystal structure disruption and symmetrically distributed stress, induced by dislocations, in promoting bond-breaking processes and triggering the formation of etch pits. The etching parameter optimized simulations revealed that once the impact effect of oxygen atoms counterbalances the promotion of dislocation to the bond breaking, the formation of dislocation pits can be effectively avoided, which is convincingly validated by experimental results. Besides, our research further verified that pure hydrogen etching is an inefficient surface post-treatment process with a more significant pit-forming problem, and exists two distinct pit-forming mechanisms dependent on the incident energy. Additionally, substrate temperature variation has global but negligible influences on pits formation within the 400 K range. These findings carry significant implications for the optimization of processing parameters and the large-scale implementation of RIE in diamond processing, demonstrating the potential to address pit-forming issues with commonly used gases.

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Cavity Etching Behavior on the M‐Plane of Sapphire Crystal

Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Etching Behaviors of Sapphire's C- Plane Cavity

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

Characterization of Dislocation Etch Pits by Molten KOH Etching in N- and P-Type 4h–sic Epilayers Doped by Ion Implantation

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Defect-Related Etch Pits on Crystals and Their Utilization

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

Mechanistic Insights into the Formation of Dislocation-Related Pits on Diamond Surface under Plasma Etching Treatment: A Combined Simulation and Experimental Approach

The Core Structure of Basal Dislocations in Deformed Sapphire (α-Al2O3)