Abstract:Sculpturing desired shapes in single crystal diamond is ever more crucial in the realization of complex devices for nanophotonics, quantum computing, and quantum optics. The crystallographic orientation dependent wet etch of single crystalline silicon in potassium hydroxide (KOH) allows a range of shapes formed and has significant impacts on MEMS (microelectromechanical systems), AFM (atomic force microscopy), and microfluidics. Here, a crystal direction dependent dry etching principle in an inductively-coupled plasma reactive ion etcher is presented, which allows to selectively reveal desired crystal planes in monocrystalline diamond by controlling the etching conditions. The principle is demonstrated when the kinetic energy of incident ions on diamond surfaces is reduced below a certain threshold leading to anisotropic etching and faceting along specific crystal planes. Using the principle, monolithic diamond nanopillars for magnetometry using nitrogen vacancy centers are fabricated. In these nanopillars, a half-tapering angle up to 21{\deg} is achieved, the highest angle reported, which leads to a high photon efficiency and high mechanical strength of the nanopillar. These results represent the first demonstration of crystallographic orientation dependent reactive ion etch principle, which opens a new window for shaping specific nanostructures which is at the heart of nanotechnology. It is believed that this principle will prove to be valuable for structuring and patterning of other single crystal materials as well.

Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Cavity Etching Behavior on the M‐Plane of Sapphire Crystal

Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Etching Behaviors of Sapphire's C- Plane Cavity

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Defect-Related Etch Pits on Crystals and Their Utilization

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

A Study of Chemical Products Formed on Sapphire (0001) During Chemical–mechanical Polishing

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Characterization of Dislocation Etch Pits by Molten KOH Etching in N- and P-Type 4h–sic Epilayers Doped by Ion Implantation

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

Crystallographic Orientation Dependent Reactive Ion Etch in Single Crystal Diamond

Chemical mechanical polishing (CMP) anisotropy in sapphire

Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Etch-Pits, of Gan Films with Different Etching Methods

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire