Abstract:Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semiconductor technology nodes in the sub-1 nm range. One key challenge with 2D semiconducting TMD channel materials is to achieve large-scale batch growth on insulating substrates of single crystals with spatial homogeneity and compelling electrical properties. Recent studies have claimed the epitaxy growth of wafer-scale, single-crystal 2D TMDs on a c -plane sapphire substrate with deliberately engineered off-cut angles. It has been postulated that exposed step edges break the energy degeneracy of nucleation and thus drive the seamless stitching of mono-oriented flakes. Here we show that a more dominant factor should be considered: in particular, the interaction of 2D TMD grains with the exposed oxygen–aluminium atomic plane establishes an energy-minimized 2D TMD–sapphire configuration. Reconstructing the surfaces of c -plane sapphire substrates to only a single type of atomic plane (plane symmetry) already guarantees the single-crystal epitaxy of monolayer TMDs without the aid of step edges. Electrical results evidence the structural uniformity of the monolayers. Our findings elucidate a long-standing question that curbs the wafer-scale batch epitaxy of 2D TMD single crystals—an important step towards using 2D materials for future electronics. Experiments extended to perovskite materials also support the argument that the interaction with sapphire atomic surfaces is more dominant than step-edge docking.

Etching Behaviors of Sapphire's C- Plane Cavity

Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Cavity Etching Behavior on the M‐Plane of Sapphire Crystal

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Fabrication of the Patterned Sapphire Substrate by the Imprint Lithography with the Flexible Hybrid Mold

Study on the Morphology and Shape Control of Volcano-Shaped Patterned Sapphire Substrates Fabricated by Imprinting and Wet Etching

Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire

Sapphire Selective Laser Etching Dependence on Radiation Wavelength and Etchant

Surface micro-texture on sapphire fabricated by laser ablation trajectory regulation

Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

Ultrasonic vibration-assisted scratch-induced characteristics of C-plane sapphire with a spherical indenter

Oriented lateral growth of two-dimensional materials on c -plane sapphire