Abstract:Atmospheric Pressure Plasma Processing (APPP) of silicon-based optics and wafers is a form of chemical etching technology developed in recent years. The material removal rate is comparable to those of conventional mechanical processing methods in precision fabrication. Moreover, there is no mechanical contact or physical loading on the substrate surface, hence no surface or sub-surface damages are induced. Inductively coupled plasma is one realization of APPP. In this work, inductively coupled plasma torch is used to generate plasma and excite etchant particles at atmospheric pressure. These active particles then diffused to the workpiece surface, react with its atoms to form volatile products. The activity and number of particles in plasma are influenced by processing parameters such as input power, distance between nozzle and substrate surface, flow rate of plasma gas argon and precursor gas CF4. These factors have various impacts on material removal rate. Processing experiments are conducted on fused silica to investigate the parameters’ influences on material removal rate. The basic interaction between substrate surface and plasma is illustrated, then the relationships between processing parameters and material removal rate are analyzed. From the experiments some trends are derived. Material removal rate rises with the increase of power and flow rate of CF4, whereas decreases with the increase of processing distance, etc. The etching footprint is proved to be near Gaussian-shaped and believed to have high potential for deterministic surface processing.

Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Preparation of Patterned Sapphire Substrate for High-efficiency and High-power Light Emitting Diodes

Research progress of Patterned Sapphire Substrate for GaN-Based Light-Emitting Diodes

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Etching Behaviors of Sapphire's C- Plane Cavity

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

Fabrication of the Patterned Sapphire Substrate by the Imprint Lithography with the Flexible Hybrid Mold

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck

The Influence of Hydrogen Plasma Etching on the Surface Conductivity of the Polycrystalline Diamond Surface and the Temperature-Dependent Properties

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient Gan-Based Leds

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Study on the Key Parameters in Etching of Fused Silica Using Atmospheric Inductively Coupled Plasma