Study on the Morphology and Shape Control of Volcano-Shaped Patterned Sapphire Substrates Fabricated by Imprinting and Wet Etching

S. X. Jiang,Z. Z. Chen,X. Z. Jiang,X. X. Fu,S. Jiang,Q. Q. Jiao,T. J. Yu,G. Y. Zhang

DOI: https://doi.org/10.1039/c4ce02452d

IF: 3.756

2015-01-01

CrystEngComm

Abstract:A novel method based on imprinting lithography and wet etching to fabricate a volcano-shaped patterned sapphire substrate (VPSS) is presented.

What problem does this paper attempt to address?

Fabrication of Nano-Patterned Sapphire Substrates by Combining Nanoimprint Lithography with Edge Effects

Yiyong Chen,Zhizhong Chen,Shengxiang Jiang,Chengcheng Li,Yifan Chen,Jinglin Zhan,Xiangning Kang,Fei Jiao,Guoyi Zhang,Bo Shen

DOI: https://doi.org/10.1039/c8ce01058g

IF: 3.756

2019-01-01

CrystEngComm

Abstract:A volcano-shaped nano-patterned sapphire substrate fabricated by combining nanoimprint lithography with edge effects.
Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Chong Geng,Lu Zheng,Huajing Fang,Qingfeng Yan,Tongbo Wei,Zhibiao Hao,Xiaoqing Wang,Dezhong Shen

DOI: https://doi.org/10.1088/0957-4484/24/33/335301

IF: 3.5

2013-01-01

Nanotechnology

Abstract:Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.
Etching Behaviors of Sapphire's C- Plane Cavity

Lunyong Zhang,Zhiyong Yuan,Hongxian Shen,Sida Jiang,Fuyang Cao,Zhiliang Ning,Dawei Xing,Hongbo Zuo,Yongjiang Huang,Jiecai Han,Jianfei Sun

DOI: https://doi.org/10.1016/j.susc.2021.121805

IF: 1.9

2021-01-01

Surface Science

Abstract:Techniques to fabricate patterned sapphire substrates (PSSs) have attracted much attention in recent decades. Wet etching behaviors and crystalline sapphire processes are critical for PSSs applications to improve the performance of light-emitting diodes. This study investigated the shape evolution behaviors and associated kinetics of cavities on the c-{0001} plane in crystalline sapphire during wet etching. It was revealed that wet etching reduces the cavity aspect ratio, and the cavity shape is a complicated structure constructed by 15 faceted planes of c-{0001}, r-{1102}, p-{1123}, m-{1010}, and s-{1101} families. A constant etching rate was demonstrated, suggesting the step flow mechanism of etching. The etching activation energy of crystalline sapphire is reduced by preformation of cavities as elucidated by the Arrhenius kinetic model followed during the etching process. This study provides new insight into wet etching behaviors of crystalline sapphire and might open up a way for fabricating sapphire substrate with large aspect ratio patterns.
Fabrication of the Patterned Sapphire Substrate by the Imprint Lithography with the Flexible Hybrid Mold

Song Baosheng,Lin Liang,Dai Ming,Xu Yelong,Lu Minghui

DOI: https://doi.org/10.3969/j.issn.1671-4776.2013.09.008

2013-01-01

Abstract:Patterned sapphire substrate(PSS) is of great significance for the enhancement of the internal quantum efficiency and light extraction efficiency for the LED.The imprint lithography with the flexible hybrid mold utilized to fabricate the PSS was researched.The fabrication processes mainly include three pattern transfer steps.Firstly,a SiO2 layer was deposited on a sapphire substrate,and then the curable resist was spin-coated on it.The UV curable imprint lithography technology was used to realize the pattern transfer from the mold to the curable resist.Secondly,the SiO2 layer was etched by the inductively coupled plasma etching,and patterns were formed on the SiO2 layer.With the SiO2 layer as a mask layer,the sapphire substrate was etched by wet etching.Finally,the PSS was obtained after removing the SiCX layer.As shown in the experiment,the photoluminescence intensity of the LED grown on the PSS fabricated by the nanoim-print lithography with the flexible hybrid mold is obviously improved compared with that of the LED on a sapphire substrate without patterns.
Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

Jian Shen,Dan Zhang,You Wang,Yang Gan

DOI: https://doi.org/10.1039/c7ce01506b

IF: 3.756

2017-01-01

CrystEngComm

Abstract:Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate (PSS) under ordinary wet etching conditions (H2SO4: H3PO4 = 5 : 1 volume ratio, 230 degrees C) were systematically studied using complementary SEM and AFM characterization techniques. The strongly time-dependent crystallographic and topographical evolutions of cylinder protrusions were revealed. Cylinders changed to triangular frustums with co-existing top c-planes, to triangular pyramids with multiple high Miller index planes, then to hexagonal pyramids, and finally to triangular pyramids with a single family of planes. The Miller indices of five major crystallographic planes were determined: CY2 {1 (1) over bar 0 15}, CY3 {1 (1) over bar 0 6}, CY(4)b {(1) over bar 1 0 5}, CY5 {4 (5) over bar 1 38}, and CY6 {1 (1) over bar 0 12}, with the first three being reported for the first time to the best of our knowledge. The etching rates of the crystallographic planes follow the order: CY3 > CY5 > CY6 > CY2 > c plane. It was clearly demonstrated that cylinder protrusions, featuring steep sidewalls, circular symmetry, and top c-planes, are suitable for studying the full spectrum of crystallographic and topographical evolution characteristics of the PSS, as well as for fabricating optimized PSSs with a specific slant angle for enhancing the performance of light emitting diodes in the future.
AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

Jian Shen,Dan Zhang,You Wang,Yang Gan

DOI: https://doi.org/10.1149/2.0221701jss

IF: 2.2

2017-01-01

ECS Journal of Solid State Science and Technology

Abstract:A thorough understanding about the crystallographic and topographical evolution of wet-etched patterned sapphire substrates (PSS) is essential for revealing the etching mechanism and critical for fabricating optimized PSS for enhanced performance of GaN-based LED devices. As the first one of a series of three papers, using complementary scanning electron microscope (SEM) and atomic force microscope (AFM), we carried out a systematic study on the crystallographic and topographical evolution of cone-shaped PSS etched with an ordinary etchant (H2SO4: H3PO4 = 3: 1 at volume ratio, 230 degrees C) which enables crystallographic specific etching. The topography of patterns was found to evolve from normal cones to truncated cones, to triangular pyramids with multiple families of exposed crystallographic planes, then to hexagonal and triangular pyramids with a single family of planes. The Miller indexes of three major exposed crystallographic planes, with decreasing slant angles, were determined to be {1 1 0 5}, {4 5 1 38} and {1 1 0 12} with the last two being reported for the first time to our best knowledge. It was clearly demonstrated that AFM, thanks to its 3D topography imaging capability compared to SEM and focused ion beam, can be an indispensable tool for fast and reliable characterization of routine PSS samples. (C) The Author(s) 2016. Published by ECS.
AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

Jian Shen,Dan Zhang,You Wang,Yang Gan

DOI: https://doi.org/10.1149/2.0091709jss

IF: 2.2

2017-01-01

ECS Journal of Solid State Science and Technology

Abstract:Here we present a systematic study on crystallographic and topographical evolutions as well as etching rates of crystallographic planes of cone-shaped patterned sapphire substrate (PSS) etched in H2SO4 and H3PO4 mixture with a wide range of volume ratios (H2SO4:H3PO4 = 1:0, 5:1, 3:1, 1:1, 1:3, and 0:1) at 230 degrees C. The Miller indexes of four major exposed crystallographic planes were determined as S-1 {1 (1) over bar 0 5}, S-3 {4 (5) over bar 1 38}, S-4 {1 (1) over bar 0 12}, and S-6 {1 (1) over bar 0 8}. The etching rates of crystallographic planes follow the order S-1 > S-3 > S-4 > c plane for H2SO4 and H3PO4 mixtures as well as S-1 > S-6 > c plane for H3PO4. A larger volume ratio (higher H2SO4 concentration) favors a higher etching rate of c-plane and conversely lower etching rates of S-1-, S-3-, and S-4-planes, thus causing a larger filling factor with the largest filling factor of 0.93 obtained at the volume ratio of 5:1. This work will contribute to revealing the etching mechanism and fabricating optimized PSS for enhanced performance of light-emitting diodes. (c) The Author(s) 2017. Published by ECS. All rights reserved.
Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Lunyong Zhang,Zhiyong Yuan,Sida Jiang,Hongxian Shen,Fuyang Cao,Zhiliang Ning,Yongjiang Huang,Dawei Xing,Hongbo Zuo,Jiecai Han,Jianfei Sun

DOI: https://doi.org/10.1016/j.jcrysgro.2020.125926

IF: 1.8

2020-01-01

Journal of Crystal Growth

Abstract:Chemical wet etching technology is widely applied in semiconductor device fabrication such as the patterned sapphire substrates. However, the etching of pre-formed structure is still lack of investigations, which has po-tential applications in the preparation of particular devices. By using molten KOH etchant, the present work studied the wet etching behaviors of cavity on the A-plane of sapphire crystal in three-dimensional space and revealed the etching kinetics. It was demonstrated that the cavity will evolve into a complicate symmetric shape with multiple facet planes during etching. The width of the cavity is gradually expanded however the depth of the cavity is stable during etching, where the Arrhenius model was held, indicating that the etching process is realized by step flow removal of atoms. The present results improve the understanding of the morphology evolution and relevant kinetics of a pre-formed structure on sapphire crystal during wet etching, which shed further light on the single crystal wet etching technology for device fabrication.
Wet Etching in β-Ga2O3 Bulk Single Crystal

Zhu Jin,Yingying Liu,Ning Xia,Xiangwei Guo,Zijian Hong,Hui Zhang,Deren Yang

DOI: https://doi.org/10.1039/d1ce01499d

IF: 3.756

2022-01-01

CrystEngComm

Abstract:Wet etching is a simple and effective method to identify defects, fabricate patterns, and polish wafers of semiconductors. We highlight recent progress in wet etching of β-Ga2O3 substrates with an aim to comprehensively understand the etching behavior and mechanism.
Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate Through Phase Separation Lithography

Xu Guo,Mengyang Ni,Zhe Zhuang,Jiangping Dai,Feixiang Wu,Yushuang Cui,Changsheng Yuan,Haixiong Ge,Yanfeng Chen

DOI: https://doi.org/10.1007/s00339-016-9933-x

2016-01-01

Abstract:A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal–organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.
Fabrication of Patterned Polymer Resists for Ion Etching by Using Dewetting

G Lu,ZL Cao,ZW Lu,W Li,JM Yao,G Zhang,B Yang,JC Shen

DOI: https://doi.org/10.3321/j.issn:0251-0790.2002.12.034

2002-01-01

Abstract:A novel method using a combination of microcontact printing(muCP) technique, surface-directed condensation and surface-directed dewetting has been developed to fabricate patterned polymer films on gold substrates. These patterned polymer films can serve as resists in the argon ion etching effectively to transfer patterns into. the underlying gold substrates. This method is flexible in controlling the shape and feature size of the patterns in the polymer resists by simply adjusting the concentration of polymer solution, and especially it also provides a route to sub-micrometer sized features by using an original template with micrometer sized features.
Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Yancheng Wang,Dai Xue,Zhaoxin Deng,Deqing Mei

DOI: https://doi.org/10.1115/1.4038675

2017-01-01

Journal of Micro and Nano-Manufacturing

Abstract:This paper develops a novel standing surface acoustic wave (SAW) device with three-pair of interdigital transducers (IDTs) to fabricate the patterned microstructure arrays with the assistance of ultraviolet (UV) polymerization. The working principle, structural design, and fabrication of the SAW device are presented. Then experimental setup was' conducted to investigate the fabrication process and method of the patterned microstructure arrays on a thin liquid polymer surface. By adjusting the input wavelength and working voltage and selecting the pairs of IDTs, several types of patterned microstructure arrays, such as linear undulate and latticed undulate with different surface morphologies, could be fabricated. Results also demonstrated that the developed SAW device with the assistance of UV polymerization is an effective method to fabricate the patterned microstructure arrays, which may have great potential in the application of biomedical and microelectronic fields.
Surface micro-texture on sapphire fabricated by laser ablation trajectory regulation

Quanli ZHANG,Zhen ZHANG,Qiwen WANG,Yucan FU,Jiuhua XU

DOI: https://doi.org/10.1016/j.cja.2021.10.009

IF: 5.7

2022-03-01

Chinese Journal of Aeronautics

Abstract:Fabrication of the surface micro-texture on the C-plane sapphire is undertaken by a 355 nm Ultraviolet (UV) pulsed laser. The surface micro-textures of sapphire with different laser scanning line spacing ranging from 10 μm to 100 μm are obtained, where the selection range of scanning line spacing is controlled in the range of the groove width and plasma width to obtain a surface of high Peak-Valley (PV) value. A reasonable processing order is proposed to manufacture different types of surface micro-textures on sapphire by laser ablation trajectory regulation. In the multiple-passes laser ablation of sapphire by the UV nanosecond pulsed laser, the scanning lines in each direction is treated as once scanning. On this basis, the multiple processing can be carried out to avoid the influence of the subsequent scanning on the machined groove. In addition, the effect of different scanning line spacing on the PV value is quantified and different types of surface micro-textures on sapphire, including the squares, the rhombuses and the hexagons, are successfully fabricated, which can be applied in the friction reduction or anti-reflection field.

engineering, aerospace
Enhanced Transmission and Self-Cleaning of Patterned Sapphire Substrates Prepared by Wet Chemical Etching Using Silica Masks

Gui-Gen Wang,Zhao-Qing Lin,Dong-Dong Zhao,Jie-Cai Han

DOI: https://doi.org/10.1021/acs.langmuir.8b01486

IF: 3.9

2018-01-01

Langmuir

Abstract:Highly transparent and superhydrophilic sapphire with surface antireflective subwavelength structures were prepared by wet etching using colloidal monolayer silica masks. The film thicknesses of the silica masks were adjusted by the volume concentrations of polystyrene spheres. The evolution of etching morphologies of sapphire was studied, and antireflective concave pyramid nanoarrays on sapphire substrates were designed by calculation and were then prepared. The transmission and wettability of as-obtained patterned sapphire substrates were also investigated. As for sapphire with optimum surface concave micropyramid arrays, average visible transmittance can reach 91.7%, which is apparently higher than that of flat sapphire (85.5%). Moreover, the concave pyramid arrays can significantly increase the surface hydrophilicity of sapphire, exhibiting a water contact angle of 12.6° compared with 62.7° of flat sapphire. The proposed method can be an excellent strategy for preparing antireflective and self-cleaning concave micropyramid subwavelength structures on sapphire without complicated equipment and expensive raw materials.
AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Jian Shen,Dan Zhang,You Wang,Yang Gan

DOI: https://doi.org/10.1149/2.0171712jss

IF: 2.2

2017-01-01

ECS Journal of Solid State Science and Technology

Abstract:The effect of etching temperature (473-543 K) on the crystallographic and topographical evolutions as well as the etching rate of crystallographic planes of cone-shaped patterned sapphire substrate (PSS) etched in both H2SO4-based (H2SO4:H3PO4 = 5:1 at volume ratio) and H3PO4 etchants was systematically studied. For H2SO4-based etchant, higher temperature favors larger etching rate ratio of slant planes (S-1{1 (1) over bar 05}, S-3 {4 (5) over bar 138}, S-4 {1 (1) over bar 012}, and S-5 {(1) over bar 1037} planes) to c-plane, thus leading to smaller filling factor (FF) of patterns; the Arrhenius activation energy (E-a) of etching reactions for various crystallographic planes follows the order: E-a (c) < E-a (S-1) < E-a (S-3) < E-a (S-4). For H3PO4, higher temperature favors smaller etching rate ratio of slant planes (S-1 {1<(1)over bar>05} and S-6 {1 (1) over bar 108} planes) to c-plane and larger FF of patterns; the E-a follows the order: E-a (S-1) < E-a (S-6) < E-a (c). This work will contribute to elucidating the etching mechanism and fabricating optimized PSS for enhanced performance of light emitting diodes. (c) The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.
Large-scale Fabrication of Nanopatterned Sapphire Substrates by Annealing of Patterned Al Thin Films by Soft UV-nanoimprint Lithography

Lin Cui,Gui-Gen Wang,Hua-Yu Zhang,Jie-Cai Han,Xu-Ping Kuang,Ji-Li Tian,Rui Sun

DOI: https://doi.org/10.1186/1556-276x-8-472

2013-01-01

Nanoscale Research Letters

Abstract:Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography.
Experimental Investigation on the Scribing of Sapphire Using Uv Laser

Maolu Wang,Yang Wang,Lei Qin,Jian Guan

DOI: https://doi.org/10.4028/www.scientific.net/amm.121-126.147

2011-01-01

Applied Mechanics and Materials

Abstract:Sapphire is an important wide bandgap semiconductor material for developing UV/blue optoelectronic devices, however because of its high hardness and chemical stability; it is mechanically and chemically difficult machine. In this paper, the scribing of sapphire by UV laser pulses is investigated under various conditions of pulse energies, scanning speed and repetition rate. The quality and morphology of the laser ablation of sapphire surface are evaluated by scanning electron microscopy. The mechanism of UV laser ablation of sapphire is discussed. The formation of grooves with high aspect ratio and good surface quality is achieved by selecting appropriate laser parameters. Scribing by pulsed UV laser therefore provide a new approach in the development of sapphire-based devices.
Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

GUI Quan-hong,ZHOU Fu-qiang,WANG Gui-gen,CUI Lin,LI Ling-hua,YAN Shuai,HAN Jie-cai

2012-01-01

Abstract:Patterned substrate sapphire has attracted much interest in recent years due to its outstanding properties in improve GaN epitaxial crystal quality and light output powers of the LEDs. The fabrication methods of patterned substrate sapphire are reviewed, including dry etch, wet etch and epitaxial growth method. The relationship between the mechanism of improve epitaxial crystal quality and morphology of the patterned substrate sapphire (grooves, micron hole, micron columnar, micron hemispherical, nano-hole and nano-columnar) is also discussed.
Material patterning on substrates by manipulation of fluidic behavior

Yitan Li,Hao Wang,Henglu Xu,Shiting Wu,Xuemei Li,Jiapeng Yu,Chaoyu Huang,Zeyao Zhang,Hao Sun,Lu Han,Meihui Li,Anyuan Cao,Zhenhai Pan,Yan Li

DOI: https://doi.org/10.1093/nsr/nwz034

IF: 20.6

2019-01-01

National Science Review

Abstract:Patterned materials on substrates are of great importance for a wide variety of applications. In solution-based approaches to material patterning, fluidic flow is inevitable. Here we demonstrate not only the importance of fluidic behavior but also the methodology of engineering the flow pattern to guide the material crystallization and assembly. We show by both experiment and simulation that substrate heating, which is generally used to accelerate evaporation, produces irregular complex vortexes. Instead, a top-heating-bottom-cooling (THBC) set-up offers an inverse temperature gradient and results in a single Marangoni vortex, which is desired for ordered nanomaterial patterning near the contact line. We then realize the fabrication of large-scale patterns of iodide perovskite crystals on different substrates under THBC conditions. We further demonstrate that harnessing the flow behavior is a general strategy with great feasibility to pattern various functional materials ranging from inorganic, organic, hybrid to biological categories on different substrates, presenting great potential for practical applications.
Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate by Hybrid Nanoimprint Lithography

Xu Guo,Jing Hu,Zhe Zhuang,Mengmeng Deng,Feixiang Wu,Xie Li,Bin Liu,Changsheng Yuan,Haixiong Ge,Feng Li,Yanfeng Chen

DOI: https://doi.org/10.1116/1.4898778

2014-01-01

Abstract:A hybrid nanoimprint soft lithography (HNSL) technique was used to fabricate nanopatterned sapphire substrates (NPSSs) for light-emitting diodes (LEDs). HNSL combines the high resolution of nanoimprint lithography (NIL) and the conformal contact of soft lithography. The key component of HNSL is the hybrid mold, which consists of rigid nanopatterns with an anti-adhesion coating on an elastic poly(dimethylsiloxane) support. The mold was used to fabricate nanopatterns on a 2-in. sapphire substrate through a soft UV-NIL system with a double-layer resist, a top UV-curable layer, and an underlying PMMA layer. Nickel dot arrays were formed from the imprinted patterns through a lift-off process and used as the etching mask during the sapphire etching process due to nickel's high etching resistance. A wafer-scale circular-truncated-cone shaped NPSS was achieved by chlorine-based inductively coupled plasma etching. Typical blue LEDs with emission wavelengths of 452 nm were grown by metal-organic chemical vapor deposition on the NPSS and a flat sapphire substrate (FSS), respectively. The integral electroluminescence intensity and light output power of the NPSS LED were enhanced by 57.9% and 43.8%, respectively, compared to the FSS LED. The high uniformity in photoluminescence intensity across the entire NPSS LED wafer indicated good uniformity of nanopatterns fabricated by HNSL. Low cost and availability of the process and the ability to fabricate at the wafer scale make HNSL a promising method for production of NPSSs.

Study on the Morphology and Shape Control of Volcano-Shaped Patterned Sapphire Substrates Fabricated by Imprinting and Wet Etching

Fabrication of Nano-Patterned Sapphire Substrates by Combining Nanoimprint Lithography with Edge Effects

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Etching Behaviors of Sapphire's C- Plane Cavity

Fabrication of the Patterned Sapphire Substrate by the Imprint Lithography with the Flexible Hybrid Mold

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Wet Etching in β-Ga2O3 Bulk Single Crystal

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate Through Phase Separation Lithography

Fabrication of Patterned Polymer Resists for Ion Etching by Using Dewetting

Patterned Microstructure Array Fabrication By Using A Novel Standing Surface Acoustic Wave Device

Surface micro-texture on sapphire fabricated by laser ablation trajectory regulation

Enhanced Transmission and Self-Cleaning of Patterned Sapphire Substrates Prepared by Wet Chemical Etching Using Silica Masks

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Large-scale Fabrication of Nanopatterned Sapphire Substrates by Annealing of Patterned Al Thin Films by Soft UV-nanoimprint Lithography

Experimental Investigation on the Scribing of Sapphire Using Uv Laser

Research progress in the preparation of patterened sapphire substrates for high-efficiency and high-power GaN-based LEDs

Material patterning on substrates by manipulation of fluidic behavior

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate by Hybrid Nanoimprint Lithography