Abstract:The hard-to-process properties associated with high hardness and high brittleness of sapphire drastically limit the services of optics, low-damage or damage-free properties are essential to the performance of sapphire optics. To achieve efficient and damage-free sapphire optics, a series of experiments involving ultra-precision grinding, polishing, and ion beam polishing were conducted. Initially, the surface and subsurface characteristics of sapphire ultra-precision grinding were examined, and the evolution of damage during polishing was discussed. Chemical etching was performed to evaluate the subsurface damage caused by polishing, ion beam polishing was used to eliminate subsurface damage. Finally, focused ion beam (FIB) and transmission electron microscopy (TEM) were employed to analyze the atomic structure of the subsurface. The results demonstrated that ultra-precision grinding can produce a ductile grinding surface and minimize subsurface damage, the difference in grinding damage on the outside and center of the workpiece was suppressed. The evolution of the surface roughness and damage behavior during polishing varied depending on the specific grinding strategy, ultra-precision grinding decreased damage removal time by 1/4. Photothermal absorption was utilized to monitor the damage progression during the polishing process and detect the presence of subsurface damage beneath the Beilby layer. Etching revealed that the subsurface damage was primarily caused by scratches, which was effectively eliminated after ion beam polishing. High-magnification TEM images provided compelling evidence of damage at the close-to-atomic scale for sapphire optics. Only amorphous structures smaller than 2 nm were observed on the subsurface, most of the atomic structure remained intact, albeit with irregular arrangement. Additionally, the grinding marks were mitigated after polishing.

Crystallographic and topographical evolutions of a cylinder patterned sapphire substrate etched with a sulfuric acid and phosphoric acid mixture: an SEM and AFM study

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part II. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture with Varying Volume Ratio at 230°C

AFM and SEM Study on Crystallographic and Topographical Evolution of Wet-Etched Patterned Sapphire Substrates (PSS) I. Cone-Shaped PSS Etched in Sulfuric Acid and Phosphoric Acid Mixture (3:1) at 230°C

AFM and SEM Study on Crystallographic and Topographical Evolutions of Wet-Etched Patterned Sapphire Substrate (PSS): Part III. Cone-Shaped PSS Etched in H2SO4and H3PO4Mixture at Various Temperatures

Etching Behaviors of Sapphire's C- Plane Cavity

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

Cavity Etching Behavior on the M‐Plane of Sapphire Crystal

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

AFM Characterization of Patterned Sapphire Substrate with Dense Cone Arrays: Image Artifacts and Tip-Cone Convolution Effect

Cavity Etching Evolution on the A-plane of Sapphire Crystal in Molten KOH Etchant

Atomic Step Morphology Research of LED Sapphire Substrate Polishing Surface and Its Periodicity

Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Tridimensional morphology and kinetics of etch pit on the {0 0 0 1} plane of sapphire crystal

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Atomic Step Formation on Sapphire Surface in Ultra-precision Manufacturing

Enhanced Transmission and Self-Cleaning of Patterned Sapphire Substrates Prepared by Wet Chemical Etching Using Silica Masks

Oriented lateral growth of two-dimensional materials on c -plane sapphire

Effect of different grinding strategies on subsequent polishing processes of sapphire

Chemical mechanical polishing (CMP) anisotropy in sapphire

Investigation into the Anisotropy of Cross-Grinding Surface Quality in C- and M-planes of Sapphire