Abstract:Silicon Carbide (SiC) is a promising wide bandgap semiconductor for future power devices since it has a wide bandgap, high breakdown voltage and good thermal stability [1]. The most mature method to perform selective area doping in 4H-SiC epiwafers during fabrication is ion implantation [2]. However, such implantation processes employing high energy ions can damage the lattice in the epilayers that can subsequently lead to formation and migration of basal plane dislocations (BPDs) which are known to be detrimental to the performance of the devices [3-4]. Implantation processes are typically conducted under room temperature (RT) conditions, but high temperature (HT) implantation is favorable when the dose level is high [5]. Oxide layer for blocking purpose is inevitable since photoresist can barely remain intact under such high temperature, which will increase the time, cost, and complexity [6-7]. Here, we will primarily emphasize the motion of the BPDs under stress from RT implantation. 1.2 kV-rated 4H-SiC PiN diodes with junction termination extension (JTE) annealed with same conditions have been successfully fabricated by implantation with different dose levels and concentration profiles under room temperature and at 600 ̊C. Concentration profiles simulated by Stopping and Range of Ions in Matter (SRIM) are shown in Fig.1(a) [8]. The JTEs were implanted with lower concentrations. Synchrotron monochromatic beam X-ray topography (SMBXT) has been performed to characterize the defects induced by implantation and annealing process. Topographs of PIN diodes are shown in Fig.1 (b)-(h). For the diodes implanted with 1x under RT and HT, there is no evidence of dislocations generated due to implantation and annealing. However, formation of BPD half loops, as highlighted in the red and yellow boxes, can be observed from the edge of the device when the dose level is elevated to 5x and 9x. In addition to that, the basal plane density (BPD) density of 5x RT Box due to implantation and annealing is much more significant than that of 5x RT and 9x RT, indicating that concentration profile can affect the defect generation. Fig.1 (e) shows topograph of PiN diode implanted with 5x under high temperature. The absence of BPDs compared to the RT implanted device to the same concentration profile suggests the generation of BPD is suppressed by the high temperature condition. In 5x RT Box device, opposite sign BPDs are nucleated from opposite edges of device, as indicated in Fig.1 (f)&(g). Here, we will analyze the motion of dislocations generated by ion implantation and annealing. Reference: [1] J. Guo, Y. Yang, B. Raghothamachar, T. Kim, M. Dudley, J. Kim, J. Cryst. Growth [2] F. Roccaforte, P. Fiorenza, M. Vivona, G. Greco, F. Giannazzo, Materials 14(14) (2021) 3923. [3] K. Konishi, R. Fujita, Y. Mori and A. Shima, Semiconductor Science and Technology 2018 Vol. 33 Issue 12 [4] M. Nagano, H. Tsuchida, T. Suzuki T. Hatakeyama, J. Senzaki and K. Fukuda, J. Appl. Phys. 108, 013511 (2010) [5] S. Mancini, S. Y. Jang, Z. Chen, D. Kim, Y. Liu, B. Raghothamachar, M. Kang, A. Agarwal, N. Mahadik, R. Stahlbush, M. Dudley, W. Sung, proceeding of 2022 IEEE International Reliability Physics Symposium (IRPS). (accepted) [6] T. Kimoto, J. A. Cooper. John Wiley & Sons Singapore Pte. Ltd. 2014. pp. 197-200 [7] D. Kim, N. Yun and W. Sung, 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, pp. 1-4, doi: 10.1109/IRPS46558.2021.9405109 Figure 1

Characterization of Dislocation Etch Pits by Molten KOH Etching in N- and P-Type 4h–sic Epilayers Doped by Ion Implantation

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

Electron-beam-induced Current Study of Electrical Activity of Dislocations in 4h–sic Homoeptaxial Film

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Dislocation Etching Morphology on the A Plane of Sapphire Crystal

Etch pit formation on β-Ga2O3 by molten KOH+NaOH and hot H3PO4 and their correlation with dislocations

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

An Easy Approach to Identify Dislocation Types in GaN Films Through Selective Chemical Etching and Atom Force Microscopy

Dislocation-related leakage-current paths of 4H silicon carbide

Dislocations in 4H Silicon Carbide

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Analysis of Basal Plane Dislocation Motion Induced By P+ Ion Implantation Using Synchrotron X-Ray Topography

Fabrication of Penetrating Pores in Epitaxial Ge-on-Si Through Preferential Etching along Threading Dislocations