Abstract:With the increasing attention of 4H-silicon carbide (4H-SiC) crystals in the applications of high-power electronics, it has become necessary to further improve the development of the 4H-SiC crystal growth process, especially the initial stage of physical vapor transport (PVT) growth, which is a critical step to obtain high quality SiC crystals with polytype stability and low dislocation density. This paper describes a study on dislocation behavior of large diameter 4H-SiC crystals at the early stages of PVT growth. Synchrotron x-ray topography is applied to 6-inch PVT-grown crystals with a thickness of several hundred microns on 4H-SiC seeds. Grazing-incidence topographs in (g = 11overline{2}8) and (g = 1overline{1}09) recorded from both the seed crystal and newly grown layer show the presence of screw-type basal plane dislocations (BPDs) with (b = 1/3left[ {11overline{2}0} ight]) at the inner region of the wafers, which is further confirmed by comparing with ray tracing simulated images of these dislocations. Their origins are likely from deflection of threading edge dislocations (TEDs) onto the basal plane by the overgrowth of macro-steps. Pairs of threading screw/mixed dislocations (TSDs/TMDs) are found to be newly generated at the initial growth stage and some are deflected onto the basal plane. A high density of newly generated TEDs is observed in the early-grown crystals, which are either nucleated in pairs at the seed/crystal interface or converted from BPDs in the seed crystal. Furthermore, dislocations with unique shapes are observed and found to be associated with deflection of TMDs and TEDs, which become the major source for BPD generation during the early PVT growth stage. Possible models to explain their formation mechanism are developed.

Dislocation Analysis for Large-Sized Sapphire Single Crystal Grown by Sapmac Method

Investigation on Large-Sized Sapphire Crystalline Perfection by X-Ray Double-Crystal Diffraction Method

Study on Defects in Large-Flat Sapphire Crystal Grown by Horizontal Directional Solidification

Thermal Stresses and Cracks During the Growth of Large-sized Sapphire with SAPMAC Method

Study on Inclusions in Large Sapphire Optical Crystal Grown by SAPMAC Method

Study on the technology of large size sapphire single crystal growth by SAPMAC

Synchrotron X‐ray Diffraction Studies of Large Sapphire Crystal Grown by Kyropoulos‐like Method

Temperature Field Design, Process Analysis and Control of SAPMAC Method for the Growth of Large Size Sapphire Crystals

Growth, quality inspection and ultrasonic vibration cutting of large size sapphire grown by SAPMAC method

X-ray Topographic Observation of Dislocation Structure in Sapphire Single Crystal Grown by Temperature Gradient Technique

The Spectra And Color Centers Of Large Sapphire Crystal

Temperature Field Design, Process Analysis And Control Of Sapphire Crystals By Sapmac Method

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Effect of Sapphire Thermal Performance Anisotropy on Crystal Growth by SAPMAC Method

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Dislocation generation mechanism analysis of GaN grown on patterned sapphire substrate

Crystallisation Surface Microtopography of [1120]- Direction Growth Sapphire Crystal

High‐temperature Infrared and Dielectric Properties of Large Sapphire Crystal for Seeker Dome Application

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals