X-ray Topographic Observation of Dislocation Structure in Sapphire Single Crystal Grown by Temperature Gradient Technique

Q ZHANG,PZ DENG,FX GAN
DOI: https://doi.org/10.1016/0022-0248(91)90385-i
IF: 1.8
1991-01-01
Journal of Crystal Growth
Abstract:The characteristic triangular cross-grid dislocation structure in sapphire single crystals grown in [0001] direction by temperature gradient technique (TGT) has been investigated by means of X-ray diffraction topography. Dislocations lie on (0001) basal planes and primarily appear as three parallel groups of straight dislocation lines. At high temperature these dislocation lines can move easily on the slip planes and form different dislocation configurations due to pinning, climbing and interacting. The analysis of Burgers vector and image width of dislocation lines confirmed that three parallel groups of straight dislocation lines are pure edge type having 〈1120〉 type Burgers vector, and a few dislocation reactions are of the type of [1120] + [1210] + [2110] = 0. A sim ple model of basal slip of the type of (0001)〈1120〉 is used to explain these dislocations.
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