Abstract:Random networks of single-walled carbon nanotubes (SWCNTs) were have been grown by chemical vapor deposition on silicon wafers and used for fabricating field-effect transistors (FETs) using symmetric Pd contacts and diodes using asymmetrical Pd and Sc contacts. For a short channel FET or diode with a channel length of about 1 μm or less, the device works in the direct transport regime, while for a longer channel device the transport mechanism changes to percolation. Detailed electronic and photovoltaic (PV) characterizations of these carbon nanotube (CNT) thin-film devices was carried out. While as-fabricated FETs exhibited typical p -type transfer characteristics, with a large current ON/OFF ratio of more than 10 4 when metallic CNTs were removed via a controlled breakdown, it was found that the threshold voltage for the devices was typically very large, of the order of about 10 V. This situation was greatly improved when the device was coated with a passivation layer of 12 nm HfO 2 , which effectively moved the threshold voltages of both FET and diode back to center around zero or turned these device to their OFF states when no bias was applied on the gate. PV measurements were then made on the short channel diodes under infrared laser illumination. It was shown that under an illumination power density of 1.5 kW/cm 2 , the device resulted in an open circuit voltage V OC = 0.21 V and a short circuit current I SC = 3.74 nA. Furthermore, we compared PV characteristics of CNT film diodes with different channel lengths, and found that the power transform efficiency decreased significantly when the device changed from the direct transport to the percolation regime.

Distinguishing Self-Gated Rectification Action from Ordinary Diode Rectification in Back-Gated Carbon Nanotube Devices

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Gate-Controlled Rectifying Behavior in C-70@Swnt Networks

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Rectifying Diodes From Asymmetrically Functionalized Single-Wall Carbon Nanotubes

Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions.

Molecular Rectification Tuned by Through-Space Gating Effect

Identifying signatures of photothermal current in a double-gated semiconducting nanotube

Progress in Research on Molecular Rectification Device of Carbon Nanotube

Negative Rectification and Negative Differential Resistance in Nanoscale Single-Walled Carbon Nanotube P-N Junctions

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

Gating the Rectifying Direction of Tunneling Current through Single-Molecule Junctions

Carbon Nanotube Intramolecular P-I-n Junction Diodes with Symmetric and Asymmetric Contacts

Fabrication of Carbon Nanotube Diode with Atomic Force Microscopy Manipulation

Simulation of carbon nanotube based p–n junction diodes

Doping-free fabrication of carbon nanotube thin-film diodes and their photovoltaic characteristics

Dependence of electronic rectification in carbon nanocone devices upon electrode materials

A First-Principles Study of B/N Doping on the Transport Properties of Ultrafine Single-Walled Carbon Nanotubes

Thermal Rectification in Y-junction Carbon Nanotube Bundle

Electronic transport characteristics in silicon nanotube field-effect transistors