Abstract:We have fabricated carbon nanotube and MoS2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (ΦSB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the ΦSB for both contact forms of CNT and MoS2 devices; we found that the ΦSB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 104; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Gate-Controlled Rectifying Behavior in C-70@Swnt Networks

Distinguishing Self-Gated Rectification Action from Ordinary Diode Rectification in Back-Gated Carbon Nanotube Devices

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

Controlling the electronic transport through the carbon nanotube junction by local electronic environment

Nanotube and Nanowire Transistors

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits

Reconfigurable Carbon Nanotube Barristor

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Rectifying Diodes From Asymmetrically Functionalized Single-Wall Carbon Nanotubes

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating

Enhancement of Ambipolar Characteristics in Single-Walled Carbon Nanotubes Using C-60 and Fabrication of Logic Gates

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

Gate Modulation of Graphene-ZnO Nanowire Schottky Diode

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Gate-tunable Contact-Induced Fermi-level Shift in Semimetal

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling