High-performance Ambipolar Field-effect Transistors with Ph-BTBT-10/PMMA/ZnO structure
Xiangyu Ji,Jiayuan Zhang,Tianci Lin,Lingyi Liu,Huili Wei,Chang Chen,Juan Xiong,Xianbao Wang,Jinhua Li,Feng Yan
DOI: https://doi.org/10.1039/d3tc02519e
IF: 6.4
2023-08-17
Journal of Materials Chemistry C
Abstract:Ambipolar field-effect transistors (FET) are a class of transistors that transport holes and electrons simultaneously in the conducting channel and it has extensive application prospects in various emerging fields such as synaptic, memory and logic devices. Single-component semiconductor materials such as ambipolar organic semiconductors, perovskites, black phosphorus and other materials are used as active layers for the ambipolar FET. However, these materials are difficult to satisfy the balanced transport of both holes and electrons. In this study, we designed and fabricated the ambipolar FET based on Ph-BTBT-10/PMMA/ZnO structure by solution process. The ZnO acts as the n-type semiconductor for the electron transport and liquid crystal small molecule Ph-BTBT-10 acts as p-type semiconductor for the hole transport. The insulating polymer PMMA is introduced through the vertical phase method for improving the interface of ZnO and Ph-BTBT-10. The ambipolar FET exhibit well-balanced electrical performance with hole and electron mobilities of 0.11 and 0.34 cm 2 V -1 s -1 . Furthermore, an inverter with a voltage gain of up to 17 V/V is demonstrated by employing two ambipolar FETs.
materials science, multidisciplinary,physics, applied