Abstract:Power dissipation is a crucial problem as the packing density of transistors increases in modern integrated circuits. Tunnel field-effect transistors (TFETs), which have high energy filtering provided by band-to-band tunneling (BTBT), have been proposed as an alternative electronics architecture to decrease the energy loss in bias operation and to achieve steep switching at room temperature. Very recently, the BTBT behavior has been demonstrated in van der Waals heterostructures by using unintentionally doped semiconductors. The reason of the BTBT formation is attributed to a significant band bending near the heterointerface, resulting in carrier accumulations. In this work, to investigate charge transport in type-III transistors, we adopted the same band-bending concept to fabricate van der Waals BP/MoS2 heterostructures. Through analyzing the temperature dependence of their electrical properties, we carefully ruled out the contribution of metal-semiconductor contact resistances and improved our understanding of carrier injection in 2D type-III transistors. The BP/MoS2 heterostructures showed both negative differential resistance and 1/f2 current fluctuations, strongly demonstrating the BTBT operation. Finally, we also designed a TFET based on this heterostructure with an ionic liquid gate, and this TFET demonstrated an subthreshold slope can successfully surmount the thermal limit of 60 mV/decade. This work improves our understanding of charge transport in such layered heterostructures and helps to improve the energy efficiency of next-generation nanoscale electronics.

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Ambipolar Field-Effect Transistors Based On Fullerene Peapods

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

Investigation on self-heating effect in carbon nanotube field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Thermal Conductivity Reduction in Carbon Nanotube by Fullerene Encapsulation: A Molecular Dynamics Study

Temperature-induced Change from P to N Conduction in Metallofullerene Nanotube Peapods

The Influence of Electro-Mechanical Effects on Resonant Electron Tunneling Through Small Carbon Nano-Peapods

High-Field Electrical Transport and Breakdown Behavior of Double-Walled Carbon Nanotube Field-Effect Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Evaluation of Structure–property Relationships of Solution-Processible Fullerene Acceptors and Their N-Channel Field-Effect Transistor Performance

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

The Study of Ambipolar Behavior in Phosphorene Field-Effect Transistors

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Transport and TEM on the Same Individual Carbon Nanotubes and Peapods

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

Field‐effect Thermoelectric Hotspot in Monolayer Graphene Transistor