Abstract:Ambipolar field-effect transistors (FET) are a class of transistors that transport holes and electrons simultaneously in the conducting channel and it has extensive application prospects in various emerging fields such as synaptic, memory and logic devices. Single-component semiconductor materials such as ambipolar organic semiconductors, perovskites, black phosphorus and other materials are used as active layers for the ambipolar FET. However, these materials are difficult to satisfy the balanced transport of both holes and electrons. In this study, we designed and fabricated the ambipolar FET based on Ph-BTBT-10/PMMA/ZnO structure by solution process. The ZnO acts as the n-type semiconductor for the electron transport and liquid crystal small molecule Ph-BTBT-10 acts as p-type semiconductor for the hole transport. The insulating polymer PMMA is introduced through the vertical phase method for improving the interface of ZnO and Ph-BTBT-10. The ambipolar FET exhibit well-balanced electrical performance with hole and electron mobilities of 0.11 and 0.34 cm 2 V -1 s -1 . Furthermore, an inverter with a voltage gain of up to 17 V/V is demonstrated by employing two ambipolar FETs.

Ambipolar Field-Effect Transistors Based On Fullerene Peapods

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

Thermally Assisted Tunnelling in Ambipolar Field-Effect Transistors Based on Fullerene Peapod Bundles

Organic Spin-Valves Based on Fullerene C60

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Field-Effect Transistors Based on Single-Wall Carbon Nanotubes Bundles

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Evaluation of Structure–property Relationships of Solution-Processible Fullerene Acceptors and Their N-Channel Field-Effect Transistor Performance

Electronic transport properties of single fullerene molecules

High-performance Ambipolar Field-effect Transistors with Ph-BTBT-10/PMMA/ZnO structure

The Study of Ambipolar Behavior in Phosphorene Field-Effect Transistors

Electrical Transport in Dy Metallofullerene Peapods

Development of fullerenes and their derivatives as semiconductors in field-effect transistors: Exploring the molecular design

Enhanced performance of field-effect transistors based on C 60 single crystals with conjugated polyelectrolyte

Conjugated Polymers, Fullerene C-60, and Carbon Nanotubes for Optoelectronic Devices

Functionalized Metallic Single-Walled Carbon Nanotubes as a High-Performance Single-Molecule Organic Field Effect Transistor: An ab Initio Study

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.