Abstract:The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors' (TFTs') performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration.

Rectifying Diodes From Asymmetrically Functionalized Single-Wall Carbon Nanotubes

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Fabrication of Carbon Nanotube Diode with Atomic Force Microscopy Manipulation

Distinguishing Self-Gated Rectification Action from Ordinary Diode Rectification in Back-Gated Carbon Nanotube Devices

Electronic-type- and diameter-dependent reduction of single-walled carbon nanotubes induced by adsorption of electron-donor molecules

A Novel Donor–acceptor Heterojunction from Single-Walled Carbon Nanotubes Functionalized by Erbium Bisphthalocyanine

A Single-Molecule Diode with Significant Rectification and Negative Differential Resistance Behavior

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Electronic Rectification Devices from Carbon Nanocones

Negative Rectification and Negative Differential Resistance in Nanoscale Single-Walled Carbon Nanotube P-N Junctions

Dependence of electronic rectification in carbon nanocone devices upon electrode materials

Supramolecular tunnelling junctions with robust high rectification based on assembly effects

Molecular Diodes Induced by a Schottky Barrier with a Gold-Silicon Doped Electrode

Tunable Current Rectification Through a Designer Graphene Nanoribbon

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis

Fundamental Insights into the Reductive Covalent Cross-Linking of Single-Walled Carbon Nanotubes.

Current rectification by simple molecular quantum dots: an ab-initio study

Molecular rectifying diodes from self-assembly on silicon