Abstract:Among the many ferroelectric film fabrication techniques, the sol-gel process provides high purity, large deposition area and easy composition control. However, the thickness limit of a crack-free single-layer film is about 0.2 mum and about 10 times of coating and thermal treatment processing are needed to deposit 1.5 mum-thick films. In laser ablation, the deposition rate is expected to be 1-2 mum/h, but the film quality is lower than that deposited by the sol-gel method. In this work, the hybrid process, involving the sol-gel method and laser ablation, was used to make 1.65 mum-thick lead zirconate titanate (PZT) films with well-crystallized perovskite phase at the (111) orientation. We deposited (111)-oriented 0.15 mum-thick PZT film on Pt/Ti/SiO2/Si substrates using the sol-gel method and then deposited 1.5 mum-thick PZT films by laser ablation. The remanent polarization of 28.6 muC/cm(2) and the coercive field of 58.0 kV/cm were obtained while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The piezoelectric coefficient d(31) was also investigated and found to be 16.65 +/- 4 pC/N. In the application, a micromirror actuated by the hybrid PZT films was designed and fabricated successfully by a three-mask lithography process. The scanning angle of 6 2 degrees was demonstrated, while resonating with 5 V-p.p at the resonance frequency (1975 Hz).

Microstructure And Properties Of Sol-Gel Pzt Thin Films With Buffer Layers

Thickness-dependent Electrical Properties of Sol–gel Derived Pb(Zr 0.52 Ti 0.48 )O 3 Thick Films Using PbTiO 3 Buffer Layers

Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited Through Sol-Gel Process

Improved Dielectric and Ferroelectric Characteristics of Highly (111)-Oriented Pb(Zr0.52ti0.48)O-3 Films Produced by Sol-Gel Method

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Microstructure and Electrical Properties of Ferroelectric Pb(Zr0.53Ti0.47)O3films on Si with TiO2buffer Layers

Sol Gel Derived Pzt Thin Films For Mems Applications

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Effect of Srtio3 Buffer Layers on Crystallization and Properties of Sol-Gel Derived Pb(Zr0.52ti0.48)O3 Thin Films

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

Electrical properties of a silicon-based PT/PZT/PT sandwich structure

Properties of PbZr<sub>x</sub>Ti<sub>1−x</sub>O<sub>3</sub>/CeO<sub>2</sub>/SiO<sub>2</sub>/Si structure

Studies of a PT/PZT/PT Sandwich Structure for Feram Applications Using Sol-Gel Processing

Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films

Influence of doping and buffer layers on Pb(Zr,Ti)O3 thin films derived from inorganic zirconium precursor

Silicon-Based PbTiO<sub>3</sub>/Pb(Zr, Ti)O<sub>3</sub>/PbTiO<sub>3</sub>Sandwich Structure

Preparation and Characterization of a Sol-Gel Prepared Ferroelectric Sandwich Structure

Structural characterization and optical properties of Sol-gel-derived polycrystalline Pb(Zr 0.35 Ti 0.65 )O 3 thin films

Crystal structure and microstructure of lead zirconate titanate (PZT) thin films with various Zr/Ti ratios grown by hybrid processing