Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Evolutionary Process of Nanoscale FinFET Channel in Hydrogen Thermal Treatment Technology

An Optimized FinFET Channel with Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Kinetic Monte Carlo Study on the Evolution of Silicon Surface Roughness under Hydrogen Thermal Treatment

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices

Nanoscale FinFET Simulation: A Quasi-3D Quantum Mechanical Model Using NEGF

Impact of Self-Heating Effects on Nanoscale Ge P-Channel FinFETs with Si Substrate

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Improving Low-Frequency Noise in 14-Nm FinFET by Optimized High-k/Metal Gate Thermal Processing

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Effects of Fin Shape on Sub-10 Nm FinFETs

Interconnection Reliability on FinFET Devices

Investigation of Degradation under Arbitrary Bias Conditions in HfO2 Based Nanosheet Nfets by 3D Kinetic Monte-Carlo Method

Study on the Regulation Factors and Mechanism of Self-Heating Effects in non-rectangular 14 nm Bulk FinFET