Abstract:It has previously been shown that ex situ phosphorus-doped polycrystalline silicon on silicon oxide (poly-Si/SiOx) passivating contacts can suffer a pronounced surface passivation degradation when subjected to a firing treatment at 800 °C or above. The degradation behavior depends strongly on the processing conditions, such as the dielectric coating layers and the firing temperature. The current work further studies the firing stability of poly-Si contacts and proposes a mechanism for the observed behavior based on the role of hydrogen. Secondary ion mass spectrometry is applied to measure the hydrogen concentration in the poly-Si/SiOx structures after firing at different temperatures and after removing hydrogen by an anneal in nitrogen. While it is known that a certain amount of hydrogen around the interfacial SiOx can be beneficial for passivation, surprisingly, we found that the excess amount of hydrogen can deteriorate the poly-Si passivation and increase the recombination current density parameter J0. The presence of excess hydrogen is evident in selected poly-Si samples fired with silicon nitride (SiNx), where the injection of additional hydrogen to the SiOx interlayer leads to further degradation in the J0, while removing hydrogen fully recovers the surface passivation. In addition, the proposed model explains the dependence of firing stability on the crystallite properties and the doping profile, which determine the effective diffusivity of hydrogen upon firing and hence the amount of hydrogen around the interfacial SiOx after firing.

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A Study of the Post-hydrogenation Passivation Mechanism of Crystallized Poly-Si Films

The Mechanism of Hydrogen Plasma Passivation for Poly-Crystalline Silicon Thin Film

The mechanism of hydrogen plasma passivation for poly-Si thin film

A Study of Optimization of Hydrogen Plasma Treatment on Poly-Si

On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

The Role of H-plasma on Aluminum-Induced Crystallization of Amorphous Silicon

Surface Passivation of Silicon Using HfO 2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Hydrogen Passivation for the Performance Enhancement of Poly-Si Crystallized by Double-Frequency YAG Laser

Radicals and Ions Controlling by Adjusting the Antenna-Substrate Distance in A-Si:H Deposition Using A Planar Icp for C-Si Surface Passivation

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

Optimum Hydrogen Injection in Phosphorus-Doped Polysilicon Passivating Contacts

Passivation of Nanocrystalline Silicon Photovoltaic Materials Employing a Negative Substrate Bias.

Crystalline Silicon Surface Passivation with SiON:H Films Deposited by Medium Frequency Magnetron Sputtering

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Hydrogen Passivation of Multi-Crystalline Silicon Solar Cells