Abstract:High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mechanism of fired passivating contacts (FPC) based on c-Si/SiOx/nc-SiCx(p) stacks was investigated. More specifically, the correlation between passivation and local re-distribution of hydrogen resulting from the application of different types of interfacial oxides (SiOx) and post-hydrogenation processes was analyzed. To do so, the applied processing sequence was interrupted at different stages in order to characterize the samples. To assess the hydrogen content, deuterium was introduced (alongside/instead of hydrogen) and secondary ion mass spectroscopy (SIMS) was used for depth profiling. Combining these results with lifetime measurements, the key role played by hydrogen in the passivation of defects at the c-Si/SiOx interface is discussed. The SIMS profiles show that hydrogen almost completely effuses out of the SiCx(p) during firing, but can be re-introduced by hydrogenation via forming gas anneal (FGA) or by release from a hydrogen containing layer such as SiNx:H. A pile-up of H at the c-Si/SiOx interface was observed and identified as a key element in the FPC's passivation mechanism. Moreover, the samples hydrogenated with SiNx:H exhibited higher H content compared to those treated by FGA, resulting in higher iVOC values. Further investigations revealed that the doping of the SiCx layer does not affect the amount of interfacial defects passivated by the hydrogenation process presented in this work. Eventually, an effect of the oxide's nature on passivation quality is evidenced. iVOC values of up to 706 mV and 720 mV were reached with FPC test structures using chemical and UV-O3 tunneling oxides, respectively, and up to 739 mV using a reference passivation sample featuring a ~25 nm thick thermal oxide.

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

A Method to Slow Down the Etching of Hydrogen Plasma Pretreatment and Improve Passivation in Silicon Heterojunction Solar Cells

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Role of the Buffer at the Interface of Intrinsic A-Si:H and P-Type A-Si:H on Amorphous/crystalline Silicon Heterojunction Solar Cells

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Improving the Performance of Crystalline Si Solar Cell by High-Pressure Hydrogenation*

Microstructure Of Hydrogenated Amorphous Silicon Layers Studied By Spectroscopic Ellipsometry For The Surface Passivation In Heterojunction Solar Cells

Enhancement of Short-Circuit Current Density in Silicon Heterojunction Solar Cells by Hydrogenated Multiple-Doped In2O3 Thin Films