Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Zhengxin Liu,Dongliang Wang,Lieyu Bian,Jinning Liu,Fanying Meng,Liping Zhang,Jian Bao,Wanwu Guo,Zhiqiang Feng
DOI: https://doi.org/10.1109/pvsc.2014.6925136
2014-01-01
Abstract:In a-Si:H/c-Si heterojunction solar cells, we developed two methods to improve the passivation effect at the a-Si:H/c-Si interface. (i) Chemical polish, etched c-Si wafer with HF and HNO3 mixtures to smooth the peaks and valleys of pyramids after the texturization with alkali; (ii) SiOx interlayer, formed ultrathin SiOx layers with a thickness of about 2 nm on c-Si surface after the chemical polish and standard RCA cleaning. This thin layer was formed by chemical oxidization in various hot solutions. The results demonstrated that these two methods improved the quality of a-Si:H/c-Si interface and the effective carrier lifetime. When they were applied to heterojunction solar cells, gains in Voc and Jsc were successfully achieved. The simplicity of these methods suggested the possible applications to the industry production.
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