Abstract:Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective contacts are demonstrated. The direct p-Si/Cu2O contact leads to a substoichiometric SiOx interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al2O3 layer is subsequently employed at the p-Si/Cu2O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu2O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al2O3/Cu2O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08258?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08258</a>.Experimental details, minority carrier lifetime, XRR spectra, UPS spectra, refractive index data, and Tauc plot (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08258/suppl_file/am1c08258_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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