Abstract:Intrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense aSi:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 mu m, 156 x 156 mm(2)) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high V-oc values of 741 mV.

Microstructure Of Hydrogenated Amorphous Silicon Layers Studied By Spectroscopic Ellipsometry For The Surface Passivation In Heterojunction Solar Cells

Study of the correlation between hydrogenated amorphous silicon microstructure and crystalline silicon surface passivation in heterojunction solar cells

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Importance of Nanocrystallites in A-Si:H Passivation Layer in Improving the Performance of Silicon Heterojunction Solar Cells

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Physical criteria for the interface passivation layer in hydrogenated amorphous/crystalline silicon heterojunction solar cell

Investigation of dual intrinsic a-Si:H films for crystalline silicon surface passivation by spectroscopic ellipsometry: application in silicon heterojunction solar cells

The microstructure of underdense hydrogenated amorphous silicon and its application to silicon heterojunction solar cells

Intrinsic layer modification in silicon heterojunctions: Balancing transport and surface passivation

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Investigation of a-Si (N+)/c-Si (P) hetero-junction solar cell through AFORS-HET simulation

Crystalline Silicon Heterojunction Solar Cells with Metal Oxide Window Layers

Influence of intrinsic amorphous silicon passivation layer on the dark-state stability of SHJ cells

Underdense A-Si:H Film Capped by A Dense Film As the Passivation Layer of A Silicon Heterojunction Solar Cell

Characterization of Microvoids in Thin Hydrogenated Amorphous Silicon Layers by Spectroscopic Ellipsometry and Fourier Transform Infrared Spectroscopy

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Light management in hydrogenated amorphous silicon germanium solar cells

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS