A Study of Optimization of Hydrogen Plasma Treatment on Poly-Si

Luo Chong,Li Juan,Li He,Meng Zhiguo,Xiong Shaozhen,Zhang Zhilin

DOI: https://doi.org/10.3969/j.issn.1005-488X.2010.03.006

2010-01-01

Abstract:The microscopic mechanism of the hydrogen passivation was studied by investigating the effect of substrate temperature and RF power on the performance of polySi using OES and FTIR.We found that Hβ and Hγ played a major role on hydrogen passivation which used LPCVD as a precursor crystallized by SPC.The intensity of Si-H or Si-H2 in poly-Si increased drastically after passivation.Within a certain temperature range,the higher the substrate temperature was,the more radicals could attach themselves to the dangling bonds,while improving the poly-Si's microstructure parameter(R) and hall mobility.Because affluent hydrogen radicals RF power could be generated to passivate poly-Si even at low power,when the RF power was reduced,I2100 and R was lowered and new defects were reduced by bombardment and etching effects,improving the performance.Passivation process is also optimized.The hall mobility is improved by 43.5% at 550°C 10 W.