Abstract:The passivation properties of a polysilicon (poly-Si) thin film are the key for improving the photovoltaic performance of TOPCon silicon solar cells. In this work, we investigate the influence of the poly-Si microstructure on the interface passivation and photovoltaic performance in TOPCon solar cells. The poly-Si thin films are prepared from phosphorus-doped hydrogenated microcrystalline silicon (μc-Si:H) layers deposited via plasma enhanced chemical vapor deposition (PECVD) under different hydrogen dilutions and recrystallized by high temperature post-deposition annealing. The results revealed that, as the hydrogen dilution ratio increases, the microstructure of the pre-deposited films transforms from an amorphous phase to a microcrystalline phase. Meanwhile, the effective minority carrier lifetime of the symmetrically passivated contact structure shows a maximum value of 1.75 ms, implying that the efficient passivation at the c-Si interface is obtained which is mainly attributed to the joint enhancement of the improved field effect passivation from poly-Si films and the reduced defects density on the silicon surface. Consequently, the devices displayed excellent rectification behavior with a rectifying ratio of 3 × 105, ascribed to the enhanced carrier transport with the high quality poly-Si film pre-deposited in the initial region of structural transition. Correspondingly, the obvious improvement of TOPCon solar cell performance was achieved, exhibiting an optimized conversion efficiency of 17.91%. The results provide an optimal design scheme for enhancing the photovoltaic properties of the TOPCon silicon solar cells.

On the Effects of Hydrogenation of Thin Film Polycrystalline Silicon: A Key Factor to Improve Heterojunction Solar Cells

A Method to Slow Down the Etching of Hydrogen Plasma Pretreatment and Improve Passivation in Silicon Heterojunction Solar Cells

Role of Hydrogen Plasma Pretreatment in Improving Passivation of the Silicon Surface for Solar Cells Applications

Investigation of positive roles of hydrogen plasma treatment for interface passivation based on silicon heterojunction solar cells

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Controllable A-Si:H/c-si Interface Passivation by Residual SiH4 Molecules in H-2 Plasma

Silicon Homojunction Solar Cells Via a Hydrogen Plasma Etching Process

Role of Hydrogen in Modifying A-Si:H/c-si Interface Passivation and Band Alignment for Rear-Emitter Silicon Heterojunction Solar Cells

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

Enhancement of Short-Circuit Current Density in Silicon Heterojunction Solar Cells by Hydrogenated Multiple-Doped In2O3 Thin Films

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Improving the Performance of Crystalline Si Solar Cell by High-Pressure Hydrogenation*

Effective Hydrogenation Strategies to Boost Efficiency over 20% for Crystalline Silicon Solar Cell with Al2O3/Cu2O Passivating Contact

Short-Time Electron-Cyclotron Resonance Hydrogenation of Polycrystalline Silicon Thin-Film Transistor Structures

Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells*

Silicon Homo-Heterojunction Solar Cells: A Promising Candidate to Realize High Performance More Stably

Performance Optimization of P-I-n Type Microcrystalline Silicon Thin Films Solar Cells Deposited in Single Chamber

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells