Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks
Jan Schmidt,Michael Winter,Floor Souren,Jons Bolding,Hindrik de Vries
DOI: https://doi.org/10.1002/pssr.202400255
2024-10-08
physica status solidi (RRL) - Rapid Research Letters
Abstract:HfO2 layers provide a highly effective passivation on p‐type silicon surfaces, resulting in implied open‐circuit voltages of 727 mV. The HfO2 coatings are made by spatial atomic layer deposition (SALD), which allows for very high deposition rates of several nanometers per second and is hence relevant for the production of future high‐efficiency solar cells. Spatial atomic layer deposition (SALD) is applied to the electronic passivation of moderately doped (≈1016 cm−3) p‐type crystalline silicon surfaces by thin layers of hafnium oxide (HfO2). For 10 nm thick HfO2 layers annealed at 400 °C, an effective surface recombination velocity Seff of 4 cm s−1 is achieved, which is below what has been reported before on moderately doped p‐type silicon. The one‐sun implied open‐circuit voltage amounts to iVoc = 727 mV. After firing at 700 °C peak temperature in a conveyor‐belt furnace, as applied in the production of solar cells, still a good level of surface passivation with an Seff of 21 cm s−1 is attained. Reducing the HfO2 thickness to 1 nm, the passivation virtually vanishes after firing (i.e., Seff > 1000 cm s−1). However, by adding a capping layer of plasma‐enhanced‐chemical‐vapor‐deposited hydrogen‐rich silicon nitride (SiNx) onto the 1 nm HfO2, a substantially improved firing stability is attained, as demonstrated by Seff values as low as 30 cm s−1 after firing, which is attributed to the hydrogenation of interface states. The presented study demonstrates that SALD‐deposited HfO2 layers and HfO2/SiNx stacks have the potential to evolve into an attractive surface passivation scheme for future solar cells.
physics, condensed matter, applied,materials science, multidisciplinary