Abstract:In the quest for ultra-high-efficiency silicon solar cells, optimising surface passivation has emerged as a critical pathway to minimise losses and enhance device performance. Recent breakthroughs in aluminium oxide (AlO x ) passivation show an interface to Si with low interface defect density and high negative charge density after activation annealing at 400–450 °C, enabling low surface recombination velocities. The formation of an interfacial SiO x layer has been recognised as a key factor. In this study, we present an in-depth investigation of a SiO x /AlO x /SiN x nanolayer stack interface with Si, where the SiO x is wet chemically grown. By varying the AlO x deposition from 5 to 40 ALD cycles, we observed a reduction in interface defect density, indicating the presence of negatively charged hydrogen in the AlO x layer. We reveal a distinctly different interface between Si and nanolayer stacks with or without AlO x . Activation annealing significantly reduced recombination losses for stacks with AlO x , attributed to increased charge density and decreased carrier capture velocity at the valence band-tail. We find lower electron capture rates in nanolayer stacks containing AlO x , suggesting effective passivation of donor states by negatively charged hydrogen. Additionally, the formation of new acceptor states was detected by an increase in hole capture velocity at the interface after annealing. Electron energy loss spectroscopy (EELS) identified an Al:SiO x N y layer of ∼2.5 nm thick with excess oxygen content and a mixture of tetrahedral and octahedral coordinated Al, likely contributing to the formation of acceptor defects and suggest an intrinsic link between the chemical and field-effect passivation.

SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS

The Effect of SiO_2 Film on Electrical Property of Solar Cell

Impact of interstitial oxygen trapped in silicon during plasma growth of silicon oxy-nitride films for silicon solar cell passivation

Research on Dual-Layer Passivation Films of the Crystalline Silicon Solar Cell

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

PASSIVATION EFFECT OF SiNx: H FILM ON CRYSTALLINE SILICON MATERIALS AND SOLAR CELLS

Oxygen and Carbon Behaviors in Multi-Crystalline Silicon and Their Effect on Solar Cell Conversion Efficiency

Passivation Property of -Si：h/sinx Stack-Layer Film in Crystalline Silicon Solar Cells

Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation Layer

Crystalline Silicon PERC Solar Cell with Ozonized AlOx Passivation Layer on the Rear Side

Effective Interface Pretreatment For Amorphous-Crystalline Silicon Heterojunction Solar Cells

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Impact of Surface Treatments on the Passivation Effect for N-Type Crystalline Silicon in Heterojunction Solar Cells

Surface Passivation of Crystalline Silicon Solar Cells by Cr:ZnO Coating Layers

Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer

Synthesis and Characterization of Fe, Cu, and Cr Doped ZnO Nanocrystallite Films and the Effects on Passivation of Silicon Surface

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Study on the Passivation of Si Surface by Incorporation of Nitrogen in Al 2 O 3 Thin Films Grown by Atomic Layer Deposition

Sulfur-enhanced surface passivation for hole-selective contacts in crystalline silicon solar cells