Abstract:Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

H-plasma enhanced aluminum induced crystallization of poly-Si

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Study on solid-phase crystallization of B-doped a-Si:H film

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Structural properties of a-Si films and their effect on aluminum induced crystallization

Crystallization of Sputtered Amorphous Silicon Induced by Silver–copper Alloy with High Crystalline Volumeratio

Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

Study on the properties of nanocrystalline silicon formed by aluminum-induced crystallization at low temperature

Crystallization of Hydrogenated Amorphous Silicon Thin Films Using Combined Continuous Wave Laser and Thermal Annealing

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Super-gravity field assisted homogeneous distribution of sub-micron eutectic Si in Al-Si alloy

Rapid crystallization of amorphous silicon films utilizing Ar-H2 mesoplasma annealing

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds

Ar+ laser crystallization of a-Si:H film for active layer of TFT