Abstract:The problem of an exciton trapped in a Gaussian quantum dot (QD) of GaAs is studied in both two and three dimensions in the presence of an external magnetic field using the Ritz variational method, the 1/N expansion method and the shifted 1/N expansion method. The ground state energy and the binding energy of the exciton are obtained as a function of the quantum dot size, confinement strength and the magnetic field and compared with those available in the literature. While the variational method gives the upper bound to the ground state energy, the 1/N expansion method gives the lower bound. The results obtained from the shifted 1/N expansion method are shown to match very well with those obtained from the exact diagonalization technique. The variation of the exciton size and the oscillator strength of the exciton are also studied as a function of the size of the quantum dot. The excited states of the exciton are computed using the shifted 1/N expansion method and it is suggested that a given number of stable excitonic bound states can be realized in a quantum dot by tuning the quantum dot parameters. This can open up the possibility of having quantum dot lasers using excitonic states.

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High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

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Donors Confined by Spherical Quantum Dots and Located Anywhere

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Donor Bound Excitons Confined in Wurtzite Ingan/Gan Quantum Dot Nanowire Heterostructures

Shallow-donor impurity effects on the far infrared electron–electron optical absorption coefficient in single and core/shell spherical quantum dots with Konwent-like confinement potential

Built-In Electric Field Effects on Donor Bound Excitons in Wurtzite Ingan Strained Coupled Quantum Dots

By using the hydrogenic spectral structures of shallow donors in quantum dots

Magnetospectroscopy of shallow donors in two dimensions in the presence of fluctuations of the electrostatic potential

Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review

Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

Suppression of Exciton Recombination in Symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 Coupled Quantum Wells Induced by an In-Plane Magnetic Field

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Exciton states in strained GaN/AlxGa1-xN quantum dots

Numerical study of Valence Band states evolution in AlGaAs [111] QDs systems

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers

Exciton states and interband optical transitions in InGaN quantum dots

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field