Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

Non-Volatile FETs with Amorphous (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, ZrO<sub>2</sub>, etc.) Gate Insulators

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Nonvolatile Ferroelectric Field-Effect Transistors.

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Studies on Al-Doped Zno Thin-Film Transistors with Pb(Zr0.3ti0.7)O-3 Gate Insulator

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

ZrO 2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles

Ferroelectric-Like Non-Volatile FET with Amorphous Gate Insulator for Supervised Learning Applications

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Sub-kT/q Switching in In2O3 Nanowire Negative Capacitance Field-Effect Transistors

Nonvolatile Ferroelectric Field Effect Transistor Based on a Vanadium Dioxide Nanowire with Large On- and Off-Field Resistance Switching

A Comparative Study of Amorphous InGaZnO Thin-Film Transistors with HfOxNy and HfO2 Gate Dielectrics

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Impact of the Interfacial Defects in Non-Volatile Mobile-Ionic Field-Effect Transistor with Amorphous ZrO2 Dielectric

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor with Ferroelectric HfZrOx/Al2O3Gate Dielectrics