Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

Giant Circular Photogalvanic Effect of the Surface States in an Ultra-Thin Bi2Se3 Nanoplate Grown by Chemical Vapor Deposition

Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2(Te0.23Se0.77)3 Nanowires Grown by Chemical Vapor Deposition

Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 Via Spin Injection

Giant plateau in the THz Faraday angle in gated Bi2Se3

Investigation of Helicity-Dependent Photocurrent of Surface States In(bi0.7sb0.3)2te3 Nanoplate

Investigation of helicity dependent photocurrent of the surface states in a (Bi 0.7 Sb 0.3 ) 2 Te 3 nanoplate

Vertically grown ultrathin Bi 2 SiO 5 as high- κ single-crystalline gate dielectric

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets.

Van Der Waals Epitaxial Growth of Atomically Thin Bi2se3 and Thickness-Dependent Topological Phase Transition

Seed‐Induced Vertical Growth of 2D Bi2O2Se Nanoplates by Chemical Vapor Transport

Temperature and Excitation Wavelength Dependence of Circular and Linear Photogalvanic Effect in a Three Dimensional Topological Insulator Bi2Se3

High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition

Pulsed Laser Deposition and Ionic Liquid Gate Control of Epitaxial Bi$_{2}$Se$_{3}$ Thin Films

Circular photogalvanic effect in an inversion-symmetry-broken bilayer germanium nanosheet

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se:Controllability and Material Quality

Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se

Epitaxial Growth of High Mobility Bi2Se3 Thin Films on CdS

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Chemical Vapor Deposition of Quaternary 2D BiCuSeO P-Type Semiconductor with Intrinsic Degeneracy

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential