Abstract:As a novel and promising 2D material, bismuth oxyselenide (Bi$_2$O$_2$Se) has demonstrated significant potential to overcome existing technical barriers in various electronic device applications, due to its unique physical properties like high symmetry, adjustable electronic structure, ultra-high electron mobility. However, the rapid growth of Bi$_2$O$_2$Se films down to a few atomic layers with precise control remains a significant challenge. In this work, the growth of two-dimensional (2D) Bi$_2$O$_2$Se thin films by the pulsed laser deposition (PLD) method is systematically investigated. By controlling temperature, oxygen pressure, laser energy density and laser emission frequency, we successfully prepare atomically thin and flat Bi$_2$O$_2$Se (001) thin films on the (001) surface of SrTiO3. Importantly, we provide a fundamental and unique perspective toward understanding the growth process of atomically thin and flat Bi$_2$O$_2$Se films, and the growth process can be primarily summarized into four steps: i) anisotropic non-spontaneous nucleation preferentially along the step roots; ii) monolayer Bi$_2$O$_2$Se nanosheets expanding across the surrounding area, and eventually covering the entire STO substrate step; iii) vertical growth of Bi$_2$O$_2$Se monolayer in a 2D Frank-van der Merwe (FM) epitaxial growth, and iv) with a layer-by-layer 2D FM growth mode, ultimately producing an atomically flat and epitaxially aligned thin film. Moreover, the combined results of the crystallinity quality, surface morphology and the chemical states manifest the successful PLD-growth of high-quality Bi$_2$O$_2$Se films in a controllable and fast mode.

Pulsed Laser Deposition and Ionic Liquid Gate Control of Epitaxial Bi$_{2}$Se$_{3}$ Thin Films

Controlled Synthesis of High-Quality Monolayered Α-In2se3 Via Physical Vapor Deposition.

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Molecular beam epitaxial growth of topological insulators.

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi_2O_2Se Films

Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit.

Controllable and Fast Growth of High-Quality Atomically Thin and Atomically Flat Bi$_2$O$_2$Se Films

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Growth of Ultrathin Bi$_2$Se$_3$ Films by Molecular Beam Epitaxy

Tunable lattice dynamics and dielectric functions of two-dimensional Bi2O2Se: Striking layer and temperature dependent effects

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

In Situ Monitoring of Resistivity and Carrier Concentration During Molecular Beam Epitaxy of Topological Insulator Bi2Se3

Molecular Beam Epitaxy of Bilayer Bi(111) Films on Topological Insulator Bi2te3: A Scanning Tunneling Microscopy Study