Abstract:Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.

Giant plateau in the THz Faraday angle in gated Bi2Se3

Dirac cone shift of a passivated topological Bi2Se3 interface state

Giant Circular Photogalvanic Effect of the Surface States in an Ultra-Thin Bi2Se3 Nanoplate Grown by Chemical Vapor Deposition

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial Β–in2se3 Thin Films

Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi2Se3.

Tuning the Quantum Oscillations of Surface Dirac Electrons in the Topological Insulator Bi$_2$Te$_2$Se by Liquid Gating

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6

Optical conductivity of a Bi 2 Se 3 topological insulator with a THz transparent top gate

High-Field Charge Transport On The Surface Of Bi2se3

Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator Bi$_2$Se$_3$

Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film

Pulsed Laser Deposition and Ionic Liquid Gate Control of Epitaxial Bi$_{2}$Se$_{3}$ Thin Films

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

Electron transport in stepped Bi2Se3 thin films

Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system

Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films