Temperature and Excitation Wavelength Dependence of Circular and Linear Photogalvanic Effect in a Three Dimensional Topological Insulator Bi2Se3

Y. M. Wang,J. L. Yu,X. L. Zeng,Y. H. Chen,Y. Liu,S. Y. Cheng,Y. F. Lai,C. M. Yin,K. He,Q. K. Xue
DOI: https://doi.org/10.1088/1361-648x/ab2b55
2019-01-01
Journal of Physics Condensed Matter
Abstract:The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi(2)Se(3 )thin film of seven quintuple layers excited by near-infrared (1064 nm) and mid-infrared (10.6 mu m) radiations have been investigated. The comparison of the CPGE current measured parallel and perpendicular to the incident plane, together with the comparison of the CPGE current under front and back illuminations, indicates that the CPGE tinder front illumination of 1064nm light is dominated by the top surface states of the Bi(2)Se(3 )thin film. The CPGE current excited by 10.6 mu m light is about one order larger than that excited by 1064nm light, which may be attributed to the smaller cancelation effect of the CPGE generated in the two-dimensional electron gas when excited by 10.6 mu m on light. Under the excitation of 1064nm light, the LPGE current is dominated by the component which shows an even parity of incident angles, while the I,PGE current excited by 10.6 mu m light is mainly contributed by the component which is an odd parity of incident angles. Both of the CPGE and LPGE currents excited by 1064nm decrease with increasing temperature, which may be owing to the decrease of the momentum relaxation time and the stronger electron-electron scattering with increasing temperature, respectively.
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