Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Forward Gated-Diode Method for Directly Measuring Stress-Induced Interface Traps in NMOSFET/SOI

An Efficient Test Structure for Interface Trap Characterization under BTI Stresses

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs

A test structure and spectroscopic method for monitoring interface traps

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOI