High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

Liyang Zhu,Qi Zhou,Xiu Yang,Jiacheng Lei,Kuangli Chen,Zhihua Luo,Peng Huang,Chunhua Zhou,Kevin J. Chen,Bo Zhang
DOI: https://doi.org/10.1109/TED.2020.3018416
IF: 3.1
2020-01-01
IEEE Transactions on Electron Devices
Abstract:In this article, an ultrathin-barrier (UTB) AlGaN/GaNdiode featuring metal-insulator-semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si3N4 cap passivation is demonstrated. The intrinsic turn-on voltage (V-ON)as low as 0.31 V determined by the as-grown AlGaN-barrier thickness (4.9 nm) is obtained and the V-ON exhibits excellent uniformity. More importantly, benefit from the MIS-gated hybrid anode structure, the UTB MG-HAD features good thermal stability in reverse blocking capability. The device delivers a substantially low leakage less than 1 mu A/mm at -300 V at high temperature (HT) up to 200 degrees C, which is more than 100x lower than that in the reference device w/o gate dielectric. Besides, the device exhibits respectably improved dynamic characteristics due to the incorporation of in situ Si3N4-cap passivation layer and remote plasma pretreatment (RPP) prior to Al2O3 gate dielectric deposition. The UTB MG-HAD featuring precisely V-ON modulation and low reverse leakage is of great interest for power electronic applications.
What problem does this paper attempt to address?