Abstract:AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential in the application of next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diodes, low leakage current and low turn-on voltage are important. GaN Schottky barrier diodes with low work-function metal as anode are found to be an effective method to decrease turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damages of groove surface, which leads to a high leakage current. In this paper, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared to the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5×10 -6 to 2.6×10 -7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is improved from -1.28 to -1.73 kV.

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode with Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 mO.cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m?cm<SUP>2</SUP> and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

High performance AlGaN/GaN power diode with edge-terminated hybrid anode

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing (Small 37/2022)

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Lateral P-Gan/2deg Junction Diodes By Selective-Area P-Gan Trench-Filling-Regrowth In Algan/Gan

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes