Abstract:AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential in the application of next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diodes, low leakage current and low turn-on voltage are important. GaN Schottky barrier diodes with low work-function metal as anode are found to be an effective method to decrease turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damages of groove surface, which leads to a high leakage current. In this paper, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared to the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5×10 -6 to 2.6×10 -7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is improved from -1.28 to -1.73 kV.

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode with Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

2.69 kV/2.11 mO.cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m?cm<SUP>2</SUP> and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Ultrathin Barrier AlGaN/GaN Hybrid‐anode‐diode with MOCVD In‐situ Si 3 N 4 ‐cap and LPCVD‐Si 3 N 4 Bilayer Passivation Stack for Dynamic Characteristic Improvement

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

<i>p</i>-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction

Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-In Schottky Barrier Diode

Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode.

Simulation Study on AlGaN/GaN Diode with Γ-shaped Anode for Ultra-Low Turn-on Voltage

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

Multi-aperture Anode Based AlGaN/GaN Schottky Barrier Diodes with Low Turn-on Voltage and High Uniformity

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode