Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

An Interdigitated Gan Mis-Hemt/Sbd Normally-Off Power Switching Device With Low On-Resistance And Low Reverse Conduction Loss

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor with Interdigital Built-In Schottky Barrier Diode

<i>p</i>-GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction

700-V <i>p</i>-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

High Performance GaN-based Monolithic Bidirectional Switch Using Diode Bridges

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

A non-Ohmic normally-off GaN monolithic bidirectional switch with MIS field effect schottky tunnel junction

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-Recessed Gated Schottky Drain

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT with Low Reverse Leakage Current and Low ON-State Resistance

Vertical Gan Power Transistor With Intrinsic Reverse Conduction And Low Gate Charge For High-Performance Power Conversion

A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch

A High-Performance GaN E-mode Reverse Blocking MISHEMT with MIS Field Effect Drain for Bidirectional Switch

Vertical GaN Power Transistor with Embedded Fin-shaped Diode for High Performance Power Conversion

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

Experimental Demonstration of Monolithic Bidirectional Switch With Anti-Paralleled Reverse Blocking p-GaN HEMTs

All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications