Abstract:The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

High-performance AlGaN∕GaN Lateral Field-Effect Rectifiers Compatible with High Electron Mobility Transistors

Hemt-Compatible Lateral Field-Effect Rectifier Using Cf4 Plasma Treatment

An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode

A Novel Controllable Hybrid-Anode Algan/Gan Field-Effect Rectifier with Low Operation Voltage

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

A novel hybrid-anode AlGaN/GaN field-effect rectifier with low operation voltage

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Monolithic Integration of Lateral Field-Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-Mode Power Supply Converters

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Analysis and Reduction of the Gate Forward Leakage Current in AlGaN/GaN HEMTs Employing Energy-Band Modulation Technology

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

High Voltage AlGaN/GaN HFET Employing Low Taper Angle Field-Plate for Stable Forward Blocking Capability

Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate